Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Computational study of surface orientation effect of wurtzite GaN on CH4 and CO sensing mechanismWang, Junjun ; Chen, Yaonan ; Wang, Yan ; Xu, Yonghao ; Zhang, ZhanyingVacuum, 2023-02, Vol.208, p.111724, Article 111724 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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2 |
Material Type: Artigo
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Investigation of edge effect on wurtzite gallium nitride in nanoindentation using molecular dynamics simulationLiu, Huan ; Zhao, Pengyue ; Zhu, Wendong ; Pan, Jiansheng ; Wang, Ziyun ; Gao, Xifeng ; Wang, Shunbo ; Tan, JiubinMaterials today communications, 2024-03, Vol.38, p.107748, Article 107748 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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3 |
Material Type: Artigo
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Effect of diamond grain shape on gallium nitride nano-grinding processZhang, Shuai ; Dai, HoufuMaterials science in semiconductor processing, 2024-03, Vol.171, p.108034, Article 108034 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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4 |
Material Type: Artigo
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Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core–Shell HeterostructuresLiu, Baodan ; Yang, Bing ; Yuan, Fang ; Liu, Qingyun ; Shi, Dan ; Jiang, Chunhai ; Zhang, Jinsong ; Staedler, Thorsten ; Jiang, XinNano letters, 2015-12, Vol.15 (12), p.7837-7846 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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5 |
Material Type: Artigo
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Analysis of dielectric function and dynamic structure factor of a multi-component plasma in a wurtzite GaNKim, Hye-Jung ; Yi, Kyung-SooCurrent applied physics, 2015-09, Vol.15, p.S16-S21 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Non-Uniform Strain Field in a Wurtzite GaN Cylinder under Compression and the Related End Friction Effect on Quantum Behavior of Valence-BandsWei, X. X.Mechanics of advanced materials and structures, 2008-12, Vol.15 (8), p.612-622 [Periódico revisado por pares]Taylor & Francis GroupTexto completo disponível |
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7 |
Material Type: Artigo
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Synthesis and structure of nanocrystal-assembled bulk GaNChen, X.L ; Cao, Y.G ; Lan, Y.C ; Xu, X.P ; Li, J.Q ; Lu, K.Q ; Jiang, P.Z ; Xu, T ; Bai, Z.G ; Yu, Y.D ; Liang, J.KJournal of crystal growth, 2000-01, Vol.209 (1), p.208-212 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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Electronic structures of substitutional C and O impurities in wurtzite GaNLiu, Chang ; Kang, JunyongOptical materials, 2003-07, Vol.23 (1), p.169-174 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Excitonic transitions in MBE grown h-GaN with cubic inclusionsStrauf, Stefan ; Michler, Peter ; Gutowski, Jürgen ; Selke, Hartmut ; Birkle, Udo ; Einfeldt, Sven ; Hommel, DetlefJournal of crystal growth, 1998-06, Vol.189-190, p.682-686 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopyXUE, Q. K ; XUE, Q. Z ; KUWANO, S ; SAKURAI, T ; OHNO, T ; TSONG, I. S. T ; QIU, X. G ; SEGAWA, YThin solid films, 2000-05, Vol.367 (1-2), p.149-158 [Periódico revisado por pares]Lausanne: Elsevier ScienceTexto completo disponível |