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1
Non-Uniform Strain Field in a Wurtzite GaN Cylinder under Compression and the Related End Friction Effect on Quantum Behavior of Valence-Bands
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Non-Uniform Strain Field in a Wurtzite GaN Cylinder under Compression and the Related End Friction Effect on Quantum Behavior of Valence-Bands

Wei, X. X.

Mechanics of advanced materials and structures, 2008-12, Vol.15 (8), p.612-622 [Periódico revisado por pares]

Taylor & Francis Group

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2
A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges
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A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges

Monavarian, Morteza ; Rashidi, Arman ; Feezell, Daniel

Physica status solidi. A, Applications and materials science, 2019-01, Vol.216 (1), p.1800628-n/a [Periódico revisado por pares]

Weinheim: Wiley Subscription Services, Inc

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3
GaN in different dimensionalities: Properties, synthesis, and applications
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GaN in different dimensionalities: Properties, synthesis, and applications

Chen, Yunxu ; Liu, Jinxin ; Liu, Keli ; Si, Jingjing ; Ding, Yiran ; Li, Linyang ; Lv, Tianrui ; Liu, Jianping ; Fu, Lei

Materials science & engineering. R, Reports : a review journal, 2019-10, Vol.138, p.60-84 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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4
Hydrostatic pressure effect on lattice thermal conductivity of wurtzite GaN semiconductor
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Hydrostatic pressure effect on lattice thermal conductivity of wurtzite GaN semiconductor

Abdullah, Diman M ; Omar, M S

Bulletin of materials science, 2024-06, Vol.47 (2), p.80 [Periódico revisado por pares]

Bangalore: Indian Academy of Sciences

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5
Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDs
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Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDs

Meier, Johanna ; Bacher, Gerd

Materials, 2022-02, Vol.15 (5), p.1626 [Periódico revisado por pares]

Switzerland: MDPI AG

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6
High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well
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High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well

Dan, Minjiang ; Hu, Gongwei ; Nie, Jiaheng ; Li, Lijie ; Zhang, Yan

Small (Weinheim an der Bergstrasse, Germany), 2021-04, Vol.17 (13), p.e2008106-n/a [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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7
Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments
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Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments

Guo, Jian ; Qiu, Changjun ; Zhu, Huiling ; Wang, Yongqiang

Materials, 2019-08, Vol.12 (17), p.2653 [Periódico revisado por pares]

Switzerland: MDPI AG

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8
Structure and chemistry of aluminum predose layers in AlN epitaxy on (111) silicon
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Structure and chemistry of aluminum predose layers in AlN epitaxy on (111) silicon

Lange, A.P. ; Tan, X.L. ; Fadley, C.S. ; Mahajan, S.

Acta materialia, 2016-08, Vol.115, p.94-103 [Periódico revisado por pares]

Elsevier Ltd

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9
Self-Assembled GaN Nanowires on Diamond
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Self-Assembled GaN Nanowires on Diamond

Schuster, Fabian ; Furtmayr, Florian ; Zamani, Reza ; Magén, Cesar ; Morante, Joan R ; Arbiol, Jordi ; Garrido, Jose A ; Stutzmann, Martin

Nano letters, 2012-05, Vol.12 (5), p.2199-2204 [Periódico revisado por pares]

Washington, DC: American Chemical Society

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10
Structural and Optical Properties of GaN Film on Copper and Graphene/Copper Metal Foils Grown by Laser Molecular Beam Epitaxy
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Structural and Optical Properties of GaN Film on Copper and Graphene/Copper Metal Foils Grown by Laser Molecular Beam Epitaxy

Ramesh, C. ; Tyagi, P. ; Bera, S. ; Gautam, S. ; Subhedar, Kiran M. ; Senthil Kumar, M. ; Kushvaha, Sunil S.

Journal of nanoscience and nanotechnology, 2020-06, Vol.20 (6), p.3929-3934

26650 The Old Road, Suite 208, Valencia, California 91381, USA: American Scientific Publishers

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