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Synthesis and structure of nanocrystal-assembled bulk GaN
Synthesis and structure of nanocrystal-assembled bulk GaN
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Synthesis and structure of nanocrystal-assembled bulk GaN

Chen, X.L ; Cao, Y.G ; Lan, Y.C ; Xu, X.P ; Li, J.Q ; Lu, K.Q ; Jiang, P.Z ; Xu, T ; Bai, Z.G ; Yu, Y.D ; Liang, J.K

Journal of crystal growth, 2000-01, Vol.209 (1), p.208-212 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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2
Excitonic transitions in MBE grown h-GaN with cubic inclusions
Excitonic transitions in MBE grown h-GaN with cubic inclusions
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Excitonic transitions in MBE grown h-GaN with cubic inclusions

Strauf, Stefan ; Michler, Peter ; Gutowski, Jürgen ; Selke, Hartmut ; Birkle, Udo ; Einfeldt, Sven ; Hommel, Detlef

Journal of crystal growth, 1998-06, Vol.189-190, p.682-686 [Periódico revisado por pares]

Elsevier B.V

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3
GaN growth on Si with rare-earth oxide distributed Bragg reflector structures
GaN growth on Si with rare-earth oxide distributed Bragg reflector structures
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GaN growth on Si with rare-earth oxide distributed Bragg reflector structures

Grinys, T. ; Dargis, R. ; Kalpakovaitė, A. ; Stanionytė, S. ; Clark, A. ; Arkun, F.E. ; Reklaitis, I. ; Tomašiūnas, R.

Journal of crystal growth, 2015-08, Vol.424, p.28-32 [Periódico revisado por pares]

Elsevier B.V

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4
Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire
Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire
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Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

Gautier, S. ; Moudakir, T. ; Patriarche, G. ; Rogers, D.J. ; Sandana, V.E. ; Hosseini Téherani, F. ; Bove, P. ; El Gmili, Y. ; Pantzas, K. ; Sundaram, Suresh ; Troadec, D. ; Voss, P.L. ; Razeghi, M. ; Ougazzaden, A.

Journal of crystal growth, 2013-05, Vol.370, p.63-67 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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5
The influence of the working pressure on the synthesis of GaN nanowires by using MOCVD
The influence of the working pressure on the synthesis of GaN nanowires by using MOCVD
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The influence of the working pressure on the synthesis of GaN nanowires by using MOCVD

Ra, Yong-Ho ; Navamathavan, R. ; Lee, Young-Min ; Kim, Dong-Wook ; Kim, Jin-Soo ; Lee, In-Hwan ; Lee, Cheul-Ro

Journal of crystal growth, 2010-03, Vol.312 (6), p.770-774 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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