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Hydrostatic pressure effect on lattice thermal conductivity of wurtzite GaN semiconductor
Hydrostatic pressure effect on lattice thermal conductivity of wurtzite GaN semiconductor
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Hydrostatic pressure effect on lattice thermal conductivity of wurtzite GaN semiconductor

Abdullah, Diman M ; Omar, M S

Bulletin of materials science, 2024-06, Vol.47 (2), p.80 [Periódico revisado por pares]

Bangalore: Indian Academy of Sciences

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2
Point defects and oxygen deficiency in GaN nanoparticles decorating GaN:O nanorods: an XPS and CL study
Point defects and oxygen deficiency in GaN nanoparticles decorating GaN:O nanorods: an XPS and CL study
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Point defects and oxygen deficiency in GaN nanoparticles decorating GaN:O nanorods: an XPS and CL study

Mendoza, A. ; Guzmán, G. ; Rivero, I. ; Camacho-López, S. ; Herrera-Zaldivar, M.

Applied physics. A, Materials science & processing, 2021-08, Vol.127 (8), Article 599 [Periódico revisado por pares]

Berlin/Heidelberg: Springer Berlin Heidelberg

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3
Hydroxyl Group Adsorption on GaN (0001) Surface: First Principles and XPS Studies
Hydroxyl Group Adsorption on GaN (0001) Surface: First Principles and XPS Studies
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Hydroxyl Group Adsorption on GaN (0001) Surface: First Principles and XPS Studies

Wang, Hengshan ; Zhang, Heqiu ; Liu, Jun ; Xue, Dongyang ; Liang, Hongwei ; Xia, Xiaochuan

Journal of electronic materials, 2019-04, Vol.48 (4), p.2430-2437 [Periódico revisado por pares]

New York: Springer US

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4
Influence of Sb Related Impurity States on the Band Structure of Dilute GaN1−xSbx Alloy
Influence of Sb Related Impurity States on the Band Structure of Dilute GaN1−xSbx Alloy
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Influence of Sb Related Impurity States on the Band Structure of Dilute GaN1−xSbx Alloy

Bera, Partha Pratim ; Das, Subhasis

Journal of electronic materials, 2021-02, Vol.50 (2), p.478-482 [Periódico revisado por pares]

New York: Springer US

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5
Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite
Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite
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Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

Li, Tianbao ; Liu, Chenyang ; Zhang, Zhe ; Yu, Bin ; Dong, Hailiang ; Jia, Wei ; Jia, Zhigang ; Yu, Chunyan ; Gan, Lin ; Xu, Bingshe ; Jiang, Haiwei

Nanoscale research letters, 2018-04, Vol.13 (1), p.130-7, Article 130 [Periódico revisado por pares]

New York: Springer US

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6
Growth Temperature Dependence of Morphology of GaN Single Crystals in the Na-Li-Ca Flux Method
Growth Temperature Dependence of Morphology of GaN Single Crystals in the Na-Li-Ca Flux Method
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Growth Temperature Dependence of Morphology of GaN Single Crystals in the Na-Li-Ca Flux Method

Wu, Xi ; Hao, Hangfei ; Li, Zhenrong ; Fan, Shiji ; Xu, Zhuo

Journal of electronic materials, 2018-02, Vol.47 (2), p.1569-1574 [Periódico revisado por pares]

New York: Springer US

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7
Characterization of Pb-Doped GaN Thin Films Grown by Thermionic Vacuum Arc
Characterization of Pb-Doped GaN Thin Films Grown by Thermionic Vacuum Arc
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Characterization of Pb-Doped GaN Thin Films Grown by Thermionic Vacuum Arc

Özen, Soner ; Pat, Suat ; Korkmaz, Şadan

Journal of electronic materials, 2018-07, Vol.47 (7), p.3727-3732 [Periódico revisado por pares]

New York: Springer US

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8
Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes
Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes
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Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes

Jeon, Joon-Woo ; Seong, Tae-Yeon ; Namgoong, Gon

Journal of electronic materials, 2012-08, Vol.41 (8), p.2145-2150 [Periódico revisado por pares]

Boston: Springer US

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