Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core–Shell HeterostructuresLiu, Baodan ; Yang, Bing ; Yuan, Fang ; Liu, Qingyun ; Shi, Dan ; Jiang, Chunhai ; Zhang, Jinsong ; Staedler, Thorsten ; Jiang, XinNano letters, 2015-12, Vol.15 (12), p.7837-7846 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
|
2 |
Material Type: Artigo
|
Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectorsRamesh, Ch ; Tyagi, P. ; Bhattacharyya, Biplab ; Husale, Sudhir ; Maurya, K.K. ; Kumar, M. Senthil ; Kushvaha, S.S.Journal of alloys and compounds, 2019-01, Vol.770, p.572-581 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
|
3 |
Material Type: Artigo
|
GaN obtained on quartz substrates through the nitridation of GaAs films deposited via CSVTGarcía-Salgado, G. ; Cruz-Bueno, J.J. ; Ramírez-González, F.S. ; Gastellou, E. ; Nieto-Caballero, F.G. ; Rosendo-Andrés, E. ; Luna-López, J.A. ; Coyopol-Solís, A. ; Romano-Trujillo, R. ; Morales-Ruiz, C. ; Galeazzi-Isasmendi, R. ; López-Gayou, V. ; Severiano, F.Journal of alloys and compounds, 2021-12, Vol.887, p.161469, Article 161469 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
|
4 |
Material Type: Artigo
|
Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDsMeier, Johanna ; Bacher, GerdMaterials, 2022-02, Vol.15 (5), p.1626 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
|
5 |
Material Type: Artigo
|
High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum WellDan, Minjiang ; Hu, Gongwei ; Nie, Jiaheng ; Li, Lijie ; Zhang, YanSmall (Weinheim an der Bergstrasse, Germany), 2021-04, Vol.17 (13), p.e2008106-n/a [Periódico revisado por pares]Germany: Wiley Subscription Services, IncTexto completo disponível |
|
6 |
Material Type: Artigo
|
Direct growth of self-aligned single-crystalline GaN nanorod array on flexible Ta foil for photocatalytic solar water-splittingTyagi, Prashant ; Ramesh, Ch ; Kaswan, Jyoti ; Dhua, Swati ; John, Subish ; Shukla, Ajay Kumar ; Roy, Somnath C. ; Kushvaha, Sunil Singh ; Muthusamy, Senthil KumarJournal of alloys and compounds, 2019-10, Vol.805, p.97-103 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
|
7 |
Material Type: Artigo
|
Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch ExperimentsGuo, Jian ; Qiu, Changjun ; Zhu, Huiling ; Wang, YongqiangMaterials, 2019-08, Vol.12 (17), p.2653 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
|
8 |
Material Type: Artigo
|
Self-Assembled GaN Nanowires on DiamondSchuster, Fabian ; Furtmayr, Florian ; Zamani, Reza ; Magén, Cesar ; Morante, Joan R ; Arbiol, Jordi ; Garrido, Jose A ; Stutzmann, MartinNano letters, 2012-05, Vol.12 (5), p.2199-2204 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
|
9 |
Material Type: Artigo
|
Structural and Optical Properties of GaN Film on Copper and Graphene/Copper Metal Foils Grown by Laser Molecular Beam EpitaxyRamesh, C. ; Tyagi, P. ; Bera, S. ; Gautam, S. ; Subhedar, Kiran M. ; Senthil Kumar, M. ; Kushvaha, Sunil S.Journal of nanoscience and nanotechnology, 2020-06, Vol.20 (6), p.3929-393426650 The Old Road, Suite 208, Valencia, California 91381, USA: American Scientific PublishersSem texto completo |
|
10 |
Material Type: Artigo
|
A new type photodiode: p-Si/GaN pn junction in series with GaN/Ag Schottky diodeYakuphanoglu, F. ; Shokr, F.S. ; Gupta, R.K. ; Al-Ghamdi, Ahmed A. ; Bin-Omran, S. ; Al-Turki, Yusuf ; El-Tantawy, FaridJournal of alloys and compounds, 2015-11, Vol.650, p.671-675 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |