skip to main content
Idioma:
Resultados 1 2 3 next page
Refinado por: Nome da Publicação: Microelectronics And Reliability remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Time-dependent statistical NBTI model for aging assessment in circuit level implemented with open model interface
Time-dependent statistical NBTI model for aging assessment in circuit level implemented with open model interface
Material Type:
Artigo 		Adicionar ao Meu Espaço

Time-dependent statistical NBTI model for aging assessment in circuit level implemented with open model interface

Zheng, Mingyue ; Chen, Wangyong ; Lyu, Yaoyang ; Chen, Haifeng ; Chen, Jiahui ; Cai, Linlin

Microelectronics and reliability, 2023-12, Vol.151, p.115254, Article 115254 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
2
A meta-heuristic search-based input vector control approach to co-optimize NBTI effect, PBTI effect, and leakage power simultaneously
A meta-heuristic search-based input vector control approach to co-optimize NBTI effect, PBTI effect, and leakage power simultaneously
Material Type:
Artigo 		Adicionar ao Meu Espaço

A meta-heuristic search-based input vector control approach to co-optimize NBTI effect, PBTI effect, and leakage power simultaneously

Bhattacharjee, Abhishek ; Das, Apangshu ; Sahu, Dheeraj Kumar ; Pradhan, Sambhu Nath ; Das, Kaushik

Microelectronics and reliability, 2023-05, Vol.144, p.114979, Article 114979 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
3
NSFET performance optimization through SiGe channel design - A simulation study
NSFET performance optimization through SiGe channel design - A simulation study
Material Type:
Artigo 		Adicionar ao Meu Espaço

NSFET performance optimization through SiGe channel design - A simulation study

Cheng, Shan-Lin ; Li, Cong ; Dong, Xiao-Yu ; Lv, Song-Song ; You, Hai-Long

Microelectronics and reliability, 2023-09, Vol.148, p.115037, Article 115037 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
4
Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits
Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits
Material Type:
Artigo 		Adicionar ao Meu Espaço

Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

Ahn, W. ; Shin, S.H. ; Jiang, C. ; Jiang, H. ; Wahab, M.A. ; Alam, M.A.

Microelectronics and reliability, 2018-02, Vol.81, p.262-273 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
5
Reliable and high performance asymmetric FinFET SRAM cell using back-gate control
Reliable and high performance asymmetric FinFET SRAM cell using back-gate control
Material Type:
Artigo 		Adicionar ao Meu Espaço

Reliable and high performance asymmetric FinFET SRAM cell using back-gate control

Niaraki Asli, Rahebeh ; Taghipour, Shiva

Microelectronics and reliability, 2020-01, Vol.104, p.113545, Article 113545 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
6
Evaluation of the impact of defects on threshold voltage drift employing SiO2 pMOS transistors
Evaluation of the impact of defects on threshold voltage drift employing SiO2 pMOS transistors
Material Type:
Artigo 		Adicionar ao Meu Espaço

Evaluation of the impact of defects on threshold voltage drift employing SiO2 pMOS transistors

Tselios, Konstantinos ; Michl, Jakob ; Knobloch, Theresia ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor ; Waltl, Michael

Microelectronics and reliability, 2022-11, Vol.138, p.114701, Article 114701 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
7
Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20nm modern integrated circuits
Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20nm modern integrated circuits
Material Type:
Artigo 		Adicionar ao Meu Espaço

Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20nm modern integrated circuits

Ahn, W. ; Shin, S.H. ; Jiang, C. ; Jiang, H. ; Wahab, M.A. ; Alam, M.A.

Microelectronics and reliability, 2018-02, Vol.81, p.262-273 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
8
An efficient NBTI sensor and compensation circuit for stable and reliable SRAM cells
An efficient NBTI sensor and compensation circuit for stable and reliable SRAM cells
Material Type:
Artigo 		Adicionar ao Meu Espaço

An efficient NBTI sensor and compensation circuit for stable and reliable SRAM cells

Shah, Ambika Prasad ; Yadav, Nandakishor ; Beohar, Ankur ; Vishvakarma, Santosh Kumar

Microelectronics and reliability, 2018-08, Vol.87, p.15-23 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
9
New insight on negative bias temperature instability degradation with drain bias of 28nm High-K Metal Gate p-MOSFET devices
New insight on negative bias temperature instability degradation with drain bias of 28nm High-K Metal Gate p-MOSFET devices
Material Type:
Artigo 		Adicionar ao Meu Espaço

New insight on negative bias temperature instability degradation with drain bias of 28nm High-K Metal Gate p-MOSFET devices

Liao, Miao ; Gan, Zhenghao

Microelectronics and reliability, 2014-11, Vol.54 (11), p.2378-2382 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
10
Analytical long-term NBTI recovery model with slowing diffusivity and locking effect of hydrogen considered
Analytical long-term NBTI recovery model with slowing diffusivity and locking effect of hydrogen considered
Material Type:
Artigo 		Adicionar ao Meu Espaço

Analytical long-term NBTI recovery model with slowing diffusivity and locking effect of hydrogen considered

Zeng, Yan ; Li, XiaoJin ; Wang, Yanling ; Sun, Yabin ; Shi, YanLing ; Guo, Ao ; Hu, ShaoJian ; Chen, Shoumian ; Zhao, Yuhang

Microelectronics and reliability, 2017-08, Vol.75, p.20-26 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
Resultados 1 2 3 next page

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.