skip to main content
Idioma:
Refinado por: Nome da Publicação: Microelectronics And Reliability remover assunto: Engineering, Electrical & Electronic remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Time-dependent statistical NBTI model for aging assessment in circuit level implemented with open model interface
Time-dependent statistical NBTI model for aging assessment in circuit level implemented with open model interface
Material Type:
Artigo 		Adicionar ao Meu Espaço

Time-dependent statistical NBTI model for aging assessment in circuit level implemented with open model interface

Zheng, Mingyue ; Chen, Wangyong ; Lyu, Yaoyang ; Chen, Haifeng ; Chen, Jiahui ; Cai, Linlin

Microelectronics and reliability, 2023-12, Vol.151, p.115254, Article 115254 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
2
A meta-heuristic search-based input vector control approach to co-optimize NBTI effect, PBTI effect, and leakage power simultaneously
A meta-heuristic search-based input vector control approach to co-optimize NBTI effect, PBTI effect, and leakage power simultaneously
Material Type:
Artigo 		Adicionar ao Meu Espaço

A meta-heuristic search-based input vector control approach to co-optimize NBTI effect, PBTI effect, and leakage power simultaneously

Bhattacharjee, Abhishek ; Das, Apangshu ; Sahu, Dheeraj Kumar ; Pradhan, Sambhu Nath ; Das, Kaushik

Microelectronics and reliability, 2023-05, Vol.144, p.114979, Article 114979 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
3
NSFET performance optimization through SiGe channel design - A simulation study
NSFET performance optimization through SiGe channel design - A simulation study
Material Type:
Artigo 		Adicionar ao Meu Espaço

NSFET performance optimization through SiGe channel design - A simulation study

Cheng, Shan-Lin ; Li, Cong ; Dong, Xiao-Yu ; Lv, Song-Song ; You, Hai-Long

Microelectronics and reliability, 2023-09, Vol.148, p.115037, Article 115037 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
4
Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits
Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits
Material Type:
Artigo 		Adicionar ao Meu Espaço

Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

Ahn, W. ; Shin, S.H. ; Jiang, C. ; Jiang, H. ; Wahab, M.A. ; Alam, M.A.

Microelectronics and reliability, 2018-02, Vol.81, p.262-273 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
5
Reliable and high performance asymmetric FinFET SRAM cell using back-gate control
Reliable and high performance asymmetric FinFET SRAM cell using back-gate control
Material Type:
Artigo 		Adicionar ao Meu Espaço

Reliable and high performance asymmetric FinFET SRAM cell using back-gate control

Niaraki Asli, Rahebeh ; Taghipour, Shiva

Microelectronics and reliability, 2020-01, Vol.104, p.113545, Article 113545 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
6
Evaluation of the impact of defects on threshold voltage drift employing SiO2 pMOS transistors
Evaluation of the impact of defects on threshold voltage drift employing SiO2 pMOS transistors
Material Type:
Artigo 		Adicionar ao Meu Espaço

Evaluation of the impact of defects on threshold voltage drift employing SiO2 pMOS transistors

Tselios, Konstantinos ; Michl, Jakob ; Knobloch, Theresia ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor ; Waltl, Michael

Microelectronics and reliability, 2022-11, Vol.138, p.114701, Article 114701 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
7
An efficient NBTI sensor and compensation circuit for stable and reliable SRAM cells
An efficient NBTI sensor and compensation circuit for stable and reliable SRAM cells
Material Type:
Artigo 		Adicionar ao Meu Espaço

An efficient NBTI sensor and compensation circuit for stable and reliable SRAM cells

Shah, Ambika Prasad ; Yadav, Nandakishor ; Beohar, Ankur ; Vishvakarma, Santosh Kumar

Microelectronics and reliability, 2018-08, Vol.87, p.15-23 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
8
Analytical long-term NBTI recovery model with slowing diffusivity and locking effect of hydrogen considered
Analytical long-term NBTI recovery model with slowing diffusivity and locking effect of hydrogen considered
Material Type:
Artigo 		Adicionar ao Meu Espaço

Analytical long-term NBTI recovery model with slowing diffusivity and locking effect of hydrogen considered

Zeng, Yan ; Li, XiaoJin ; Wang, Yanling ; Sun, Yabin ; Shi, YanLing ; Guo, Ao ; Hu, ShaoJian ; Chen, Shoumian ; Zhao, Yuhang

Microelectronics and reliability, 2017-08, Vol.75, p.20-26 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
9
Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process
Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process
Material Type:
Artigo 		Adicionar ao Meu Espaço

Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process

Martin, A. ; Vollertsen, R.-P. ; Mitchell, A. ; Traving, M. ; Beckmeier, D. ; Nielen, H.

Microelectronics and reliability, 2016-09, Vol.64, p.2-12 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por
10
Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits
Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits
Material Type:
Artigo 		Adicionar ao Meu Espaço

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits

Guo, Shaofeng ; Wang, Runsheng ; Ren, Pengpeng ; Liu, Changze ; Luo, Mulong ; Jiang, Xiaobo ; Wang, Yangyuan ; Huang, Ru

Microelectronics and reliability, 2018-02, Vol.81, p.101-111 [Periódico revisado por pares]

Elsevier Ltd

Texto completo disponível

Citações Citado por

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Data de Publicação 

De até
Refinar
  1. Antes de1997  (1)
  2. 1997Até2013  (1)
  3. 2014Até2015  (2)
  4. 2016Até2017  (6)
  5. Após 2017  (8)
  6. Mais opções open sub menu

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.