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Refinado por: Nome da Publicação: Nuclear Instruments & Methods In Physics Research. Section B, Beam Interactions With Materials And Atoms remover
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He-induced cavity formation in silicon upon high-temperature implantation
He-induced cavity formation in silicon upon high-temperature implantation
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He-induced cavity formation in silicon upon high-temperature implantation

Fichtner, P.F.P ; Peeva, A ; Behar, M ; M. Azevedo, G.de ; Maltez, R.L ; Koegler, R ; Skorupa, W

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2000-03, Vol.161, p.1038-1042 [Periódico revisado por pares]

Elsevier B.V

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2
Structural characterization of Ge nanocrystals in silica amorphised by ion irradiation
Structural characterization of Ge nanocrystals in silica amorphised by ion irradiation
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Structural characterization of Ge nanocrystals in silica amorphised by ion irradiation

Araujo, L.L. ; Giulian, R. ; Johannessen, B. ; Llewellyn, D.J. ; Kluth, P. ; Azevedo, G. de M. ; Cookson, D.J. ; Ridgway, M.C.

Nucl. Instrum. Methods B, 2008-06, Vol.266 (12-13), p.3153-3157 [Periódico revisado por pares]

United States: Elsevier B.V

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3
Atomic-scale structure of irradiated GaN compared to amorphised GaP and GaAs
Atomic-scale structure of irradiated GaN compared to amorphised GaP and GaAs
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Atomic-scale structure of irradiated GaN compared to amorphised GaP and GaAs

Ridgway, M.C. ; Everett, S.E. ; Glover, C.J. ; Kluth, S.M. ; Kluth, P. ; Johannessen, B. ; Hussain, Z.S. ; Llewellyn, D.J. ; Foran, G.J. ; Azevedo, G. de M.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-09, Vol.250 (1-2), p.287-290 [Periódico revisado por pares]

Elsevier B.V

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4
Direct observation of structural relaxation in amorphous compound semiconductors
Direct observation of structural relaxation in amorphous compound semiconductors
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Direct observation of structural relaxation in amorphous compound semiconductors

Azevedo, G.de M. ; Glover, C.J. ; Yu, K.M. ; Foran, G.J. ; Ridgway, M.C.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-05, Vol.206 (Complete), p.1024-1027 [Periódico revisado por pares]

United States: Elsevier B.V

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5
EXAFS measurements of metal-decorated nanocavities in Si
EXAFS measurements of metal-decorated nanocavities in Si
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EXAFS measurements of metal-decorated nanocavities in Si

Azevedo, G.de M. ; Ridgway, M.C. ; Betlehem, J. ; Yu, K.M. ; Glover, C.J. ; Foran, G.J.

3rd International Conference on Synchrotron Radiation in Materials Science,Singapore, Singapore,2002-01-21 - 2002-01-24, 2003, Vol.199 (Complete), p.179-184 [Periódico revisado por pares]

United States: Elsevier B.V

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6
Impact-parameter dependent energy loss of screened ions
Impact-parameter dependent energy loss of screened ions
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Impact-parameter dependent energy loss of screened ions

Azevedo, G.de M. ; Grande, P.L. ; Schiwietz, G.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2000-04, Vol.164-165, p.203-211 [Periódico revisado por pares]

Elsevier B.V

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7
EXAFS characterisation of Ge nanocrystals in silica
EXAFS characterisation of Ge nanocrystals in silica
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EXAFS characterisation of Ge nanocrystals in silica

Ridgway, M.C. ; Azevedo, G.de M. ; Glover, C.J. ; Elliman, R.G. ; Llewellyn, D.J. ; Cheung, A. ; Johannessen, B. ; Brett, D.A. ; Foran, G.J.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-06, Vol.218, p.421-426 [Periódico revisado por pares]

Elsevier B.V

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8
Common structure in amorphised compound semiconductors
Common structure in amorphised compound semiconductors
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Common structure in amorphised compound semiconductors

Ridgway, M.C. ; Azevedo, G.de M. ; Glover, C.J. ; Yu, K.M. ; Foran, G.J.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003, Vol.199, p.235-239 [Periódico revisado por pares]

United States: Elsevier B.V

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9
Molecular H2 and H3 energy loss measurements along the Si 〈111〉 direction
Molecular H2 and H3 energy loss measurements along the Si 〈111〉 direction
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Molecular H2 and H3 energy loss measurements along the Si 〈111〉 direction

Behar, M ; Grande, P.L ; Azevedo, G.de M ; Alves, E ; Silva, M.F.da ; Soares, J.C

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2000-03, Vol.161-163, p.168-171 [Periódico revisado por pares]

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10
Charge equilibration process for channeled He ions along the Si〈1 0 0〉 direction
Charge equilibration process for channeled He ions along the Si〈1 0 0〉 direction
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Charge equilibration process for channeled He ions along the Si〈1 0 0〉 direction

Azevedo, G.de M ; Kaschny, J.R.A ; Dias, J.F ; Grande, P.L ; Behar, M ; Klatt, Ch ; Kalbitzer, S

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.148 (1), p.168-171 [Periódico revisado por pares]

Elsevier B.V

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