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Refinado por: Nome da Publicação: Nuclear Instruments & Methods In Physics Research. Section B, Beam Interactions With Materials And Atoms remover assunto: Physics remover
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1
He-induced cavity formation in silicon upon high-temperature implantation
He-induced cavity formation in silicon upon high-temperature implantation
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He-induced cavity formation in silicon upon high-temperature implantation

Fichtner, P.F.P ; Peeva, A ; Behar, M ; M. Azevedo, G.de ; Maltez, R.L ; Koegler, R ; Skorupa, W

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2000-03, Vol.161, p.1038-1042 [Periódico revisado por pares]

Elsevier B.V

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2
Atomic-scale structure of irradiated GaN compared to amorphised GaP and GaAs
Atomic-scale structure of irradiated GaN compared to amorphised GaP and GaAs
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Atomic-scale structure of irradiated GaN compared to amorphised GaP and GaAs

Ridgway, M.C. ; Everett, S.E. ; Glover, C.J. ; Kluth, S.M. ; Kluth, P. ; Johannessen, B. ; Hussain, Z.S. ; Llewellyn, D.J. ; Foran, G.J. ; Azevedo, G. de M.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-09, Vol.250 (1-2), p.287-290 [Periódico revisado por pares]

Elsevier B.V

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3
Direct observation of structural relaxation in amorphous compound semiconductors
Direct observation of structural relaxation in amorphous compound semiconductors
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Direct observation of structural relaxation in amorphous compound semiconductors

Azevedo, G.de M. ; Glover, C.J. ; Yu, K.M. ; Foran, G.J. ; Ridgway, M.C.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-05, Vol.206 (Complete), p.1024-1027 [Periódico revisado por pares]

United States: Elsevier B.V

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4
EXAFS measurements of metal-decorated nanocavities in Si
EXAFS measurements of metal-decorated nanocavities in Si
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EXAFS measurements of metal-decorated nanocavities in Si

Azevedo, G.de M. ; Ridgway, M.C. ; Betlehem, J. ; Yu, K.M. ; Glover, C.J. ; Foran, G.J.

3rd International Conference on Synchrotron Radiation in Materials Science,Singapore, Singapore,2002-01-21 - 2002-01-24, 2003, Vol.199 (Complete), p.179-184 [Periódico revisado por pares]

United States: Elsevier B.V

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5
Impact-parameter dependent energy loss of screened ions
Impact-parameter dependent energy loss of screened ions
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Impact-parameter dependent energy loss of screened ions

Azevedo, G.de M. ; Grande, P.L. ; Schiwietz, G.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2000-04, Vol.164-165, p.203-211 [Periódico revisado por pares]

Elsevier B.V

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6
EXAFS characterisation of Ge nanocrystals in silica
EXAFS characterisation of Ge nanocrystals in silica
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EXAFS characterisation of Ge nanocrystals in silica

Ridgway, M.C. ; Azevedo, G.de M. ; Glover, C.J. ; Elliman, R.G. ; Llewellyn, D.J. ; Cheung, A. ; Johannessen, B. ; Brett, D.A. ; Foran, G.J.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-06, Vol.218, p.421-426 [Periódico revisado por pares]

Elsevier B.V

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7
Common structure in amorphised compound semiconductors
Common structure in amorphised compound semiconductors
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Common structure in amorphised compound semiconductors

Ridgway, M.C. ; Azevedo, G.de M. ; Glover, C.J. ; Yu, K.M. ; Foran, G.J.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003, Vol.199, p.235-239 [Periódico revisado por pares]

United States: Elsevier B.V

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8
Structural characterization of amorphised InAs with synchrotron radiation
Structural characterization of amorphised InAs with synchrotron radiation
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Structural characterization of amorphised InAs with synchrotron radiation

Azevedo, G.de M. ; Ridgway, M.C. ; Yu, K.M. ; Glover, C.J. ; Foran, G.J.

15th International Conference on Ion-Beam Analysis (IBA-15),Cairns, Australia,2001-07-15 - 2001-07-20, 2002-05, Vol.190 (1), p.851-855 [Periódico revisado por pares]

Elsevier B.V

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9
In situ measurements of the channeling dependence of ion-beam-induced recrystallization in silicon
In situ measurements of the channeling dependence of ion-beam-induced recrystallization in silicon
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In situ measurements of the channeling dependence of ion-beam-induced recrystallization in silicon

Azevedo, G.de M. ; Williams, J.S. ; Young, I.M. ; Conway, M.J. ; Kinomura, A.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-05, Vol.190 (1), p.772-776 [Periódico revisado por pares]

Elsevier B.V

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10
Random energy loss and straggling study of Li into Si
Random energy loss and straggling study of Li into Si
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Random energy loss and straggling study of Li into Si

da Silva, D.L. ; Azevedo, G.de M. ; Behar, M. ; Dias, J.F. ; Grande, P.L.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-04, Vol.175, p.98-101 [Periódico revisado por pares]

Elsevier B.V

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