Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0. 9 a Gev /sup 238/U on /sup 238/U collisions in the LBL streamer chamber. Appendix AFung, S.Y ; Beavis, D ; Gorn, W ; Keane, D ; Liu, Y.M ; Poe, R.T ; VanDalen, G ; Vient, MUniversity of California, Riverside 1984-01Sem texto completo |
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2 |
Material Type: Ata de Congresso
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0. 9 a Gev /sup 238/U on /sup 238/U collisions in the LBL streamer chamber. Appendix AFung, S.Y. ; Beavis, D. ; Gorn, W. ; Keane, D. ; Liu, Y.M. ; Poe, R.T. ; VanDalen, G. ; Vient, M.United States 1984Sem texto completo |
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3 |
Material Type: Artigo
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0.1 micron Schottky-collector AlAs/GaAs resonant tunneling diodesSmith, R P ; Allen, S T ; Reddy, M ; Martin, S C ; Liu, J ; Muller, R E ; Rodwell, M J WIEEE electron device letters, 1994-08, Vol.15 (8), p.295-297 [Periódico revisado por pares]Texto completo disponível |
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4 |
Material Type: Artigo
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0.1 μm Schottky-collector AlAs/GaAs resonant tunneling diodesSmith, R.P. ; Alien, S.T. ; Reddy, M. ; Martin, S.C. ; Liu, J. ; Muller, R.E. ; Rodwell, M.J.W.IEEE electron device letters, 1994-08, Vol.15 (8), p.295-297 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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0.2-mu m n-channel and p-channel MOSFETs integrated onoxidation-planarized twin-tubsLiu, C T ; Lin, W ; Lee, K H ; Liu, RIEEE electron device letters, 1996-11, Vol.17 (11), p.500-502 [Periódico revisado por pares]Texto completo disponível |
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6 |
Material Type: Artigo
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0.2-μm n-channel and p-channel MOSFETs integrated on oxidation-planarized twin-tubsLiu, C.T. ; Lin, W. ; Lee, K.H. ; Liu, R.IEEE electron device letters, 1996-11, Vol.17 (11), p.500-502 [Periódico revisado por pares]IEEETexto completo disponível |
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7 |
Material Type: Ata de Congresso
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0.25/spl mu/m In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InAs/sub 0.3/P/sub 0.7/ composite channel HEMTs with an f/sub T/ of 115GHzLiu, D. ; Hudait, M. ; Lin, Y. ; Kim, H. ; Ringel, S.A. ; Lu, W.2005 Asia-Pacific Microwave Conference Proceedings, 2005, Vol.2, p.3 pp.IEEETexto completo disponível |
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8 |
Material Type: Artigo
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0.8 mW 1.1-5.6 GHz dual-modulus prescaler based on multi-phase quasi-differential locking dividerYU, X. P ; LIM, W. M ; LU, Z ; GU, J ; LIU, Y ; KIAT-SENG, YElectronics letters, 2010-11, Vol.46 (24), p.1595-1597 [Periódico revisado por pares]Stevenage: Institution of Engineering and TechnologySem texto completo |
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9 |
Material Type: Artigo
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0.8 mW 1.1-5.6 GHz dual-modulus prescaler based on multi-phase quasi-differential locking dividerYu, X P ; Lim, W M ; Lu, Z ; Gu, J ; Liu, Y ; Kiat-Seng, YElectronics letters, 2010-11, Vol.46 (24), p.1-1 [Periódico revisado por pares]Stevenage: The Institution of Engineering & TechnologySem texto completo |
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10 |
Material Type: Artigo
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0.9 V 58 μW 92 dB SNDR audio ΔΣ modulator with high efficiency low noise switched-opamp and novel DWA techniqueWANG, H ; ZHAO, M ; WU, X ; LIU, BElectronics letters, 2011, Vol.47 (4), p.237-239 [Periódico revisado por pares]Stevenage: Institution of Engineering and TechnologySem texto completo |