Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectorsGhose, Susmita ; Rahman, Shafiqur ; Hong, Liang ; Rojas-Ramirez, Juan Salvador ; Jin, Hanbyul ; Park, Kibog ; Klie, Robert ; Droopad, RaviJournal of applied physics, 2017-09, Vol.122 (9) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Experimental and theoretical studies on atomic structures of the interface states at SiO2/4H-SiC(0001) interfaceYamashita, Yoshiyuki ; Nara, Jun ; Indari, Efi Dwi ; Yamasaki, Takahiro ; Ohno, Takahisa ; Hasunuma, RyuJournal of applied physics, 2022-06, Vol.131 (21) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Reduced dependence of thermal conductivity on temperature and pressure of multi-atom component crystalline solid solutionsGiri, Ashutosh ; Braun, Jeffrey L. ; Hopkins, Patrick E.Journal of applied physics, 2018-01, Vol.123 (1) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Local atomic order, electronic structure and electron transport properties of Cu-Zr metallic glassesAntonowicz, J. ; Pietnoczka, A. ; Pękała, K. ; Latuch, J. ; Evangelakis, G. A.Journal of applied physics, 2014-05, Vol.115 (20) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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Molecular self ordering and charge transport in layer by layer deposited poly (3,3‴-dialkylquarterthiophene) films formed by Langmuir-Schaefer techniquePandey, Rajiv K. ; Singh, Arun Kumar ; Upadhyay, C. ; Prakash, RajivJournal of applied physics, 2014-09, Vol.116 (9) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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A novel approach for the characterization of a bilayer of phenyl-c71-butyric-acid-methyl ester and pentacene using ultraviolet photoemission spectroscopy and argon gas cluster ion beam sputtering processYun, Dong-Jin ; Chung, JaeGwan ; Jung, Changhoon ; Chung, Yeonji ; Kim, SeongHeon ; Lee, Seunghyup ; Kim, Ki-Hong ; Han, Hyouksoo ; Park, Gyeong-Su ; Park, SungHoonJournal of applied physics, 2013-09, Vol.114 (9) [Periódico revisado por pares]United StatesTexto completo disponível |
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7 |
Material Type: Artigo
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Structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxyKanzyuba, Vasily ; Dong, Sining ; Liu, Xinyu ; Li, Xiang ; Rouvimov, Sergei ; Okuno, Hanako ; Mariette, Henri ; Zhang, Xueqiang ; Ptasinska, Sylwia ; Tracy, Brian D. ; Smith, David J. ; Dobrowolska, Margaret ; Furdyna, Jacek K.Journal of applied physics, 2017-02, Vol.121 (7) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Tungsten polyoxometalate molecules as active nodes for dynamic carrier exchange in hybrid molecular/semiconductor capacitorsBalliou, A. ; Douvas, A. M. ; Normand, P. ; Tsikritzis, D. ; Kennou, S. ; Argitis, P. ; Glezos, N.Journal of applied physics, 2014-10, Vol.116 (14) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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The electronic structure of homogeneous ferromagnetic (Ga, Mn)N epitaxial filmsPiskorska-Hommel, E. ; Winiarski, M. J. ; Kunert, G. ; Demchenko, I. N. ; Roshchupkina, O. D. ; Grenzer, J. ; Falta, J. ; Hommel, D. ; Holý, V.Journal of applied physics, 2015-02, Vol.117 (6) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructuresAbramkin, D. S. ; Putyato, M. A. ; Budennyy, S. A. ; Gutakovskii, A. K. ; Semyagin, B. R. ; Preobrazhenskii, V. V. ; Kolomys, O. F. ; Strelchuk, V. V. ; Shamirzaev, T. S.Journal of applied physics, 2012-10, Vol.112 (8) [Periódico revisado por pares]United StatesTexto completo disponível |