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1
Energy dependence of the sputtering yield of silicon bombarded with neon, argon, krypton, and Xenon ions
Energy dependence of the sputtering yield of silicon bombarded with neon, argon, krypton, and Xenon ions
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Energy dependence of the sputtering yield of silicon bombarded with neon, argon, krypton, and Xenon ions

ZALM, P. C

J. Appl. Phys.; (United States), 1983-05, Vol.54 (5), p.2660-2666 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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2
Theoretical calculations of energy transfer from noble gases to surfaces
Theoretical calculations of energy transfer from noble gases to surfaces
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Theoretical calculations of energy transfer from noble gases to surfaces

LUO, Z ; HOU, Q

Journal of applied physics, 1993-11, Vol.74 (10), p.6007-6011 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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3
Slowing down and thermalization of sputtered particle fluxes: energy distributions
Slowing down and thermalization of sputtered particle fluxes: energy distributions
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Slowing down and thermalization of sputtered particle fluxes: energy distributions

GRAS-MARTI, A ; VALLES-ABARCA, J. A

J. Appl. Phys.; (United States), 1983-02, Vol.54 (2), p.1071-1075 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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4
The dependence of Si and SiO2 electron emission of the angle of ion incidence
The dependence of Si and SiO2 electron emission of the angle of ion incidence
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The dependence of Si and SiO2 electron emission of the angle of ion incidence

JACOBSSON, H ; HOLMEN, G

Journal of applied physics, 1993-11, Vol.74 (10), p.6397-6400 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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5
Modeling of the bremsstrahlung radiation produced in pure-element targets by 10-40 keV electrons
Modeling of the bremsstrahlung radiation produced in pure-element targets by 10-40 keV electrons
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Modeling of the bremsstrahlung radiation produced in pure-element targets by 10-40 keV electrons

SMALL, J. A ; LEIGH, S. D ; NEWBURY, D. E ; MYKLEBUST, R. L

J. Appl. Phys.; (United States), 1987-01, Vol.61 (2), p.459-469 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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6
Criterion analysis on nonpoisoning of the target surface
Criterion analysis on nonpoisoning of the target surface
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Criterion analysis on nonpoisoning of the target surface

JINGYI WANG ; WEI CHEN ; YU WANG ; NING ZHAO ; XIAOMING HE ; RODIONOV, Y. A

Journal of applied physics, 1993-03, Vol.73 (5), p.2518-2523 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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7
Elastic scattering of low-energy positrons by bound silicon and germanium
Elastic scattering of low-energy positrons by bound silicon and germanium
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Elastic scattering of low-energy positrons by bound silicon and germanium

ANTOLAK, A. J ; WILLIAMSON, W. JR

Journal of applied physics, 1991-03, Vol.69 (6), p.3760-3762 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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8
Sputtering of negative hydrogen ions by cesium bombardment
Sputtering of negative hydrogen ions by cesium bombardment
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Sputtering of negative hydrogen ions by cesium bombardment

LOPES, J. L ; GREER, J. A ; SEIDL, M

J. Appl. Phys.; (United States), 1986-07, Vol.60 (1), p.17-23 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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9
Consequences of sputtering with molecular ions
Consequences of sputtering with molecular ions
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Consequences of sputtering with molecular ions

ZALM, P. C ; BECKERS, L. J

J. Appl. Phys.; (United States), 1984-07, Vol.56 (1), p.220-223 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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10
Electron-hole pair creation at a Ge(100) surface by ground-state neutral Xe atoms
Electron-hole pair creation at a Ge(100) surface by ground-state neutral Xe atoms
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Electron-hole pair creation at a Ge(100) surface by ground-state neutral Xe atoms

AMIRAV, A ; LAMBERT, W. R ; CARDILLO, M. J ; TREVOR, P. L ; LUKE, P. N ; HALLER, E. E

J. Appl. Phys.; (United States), 1986-03, Vol.59 (6), p.2213-2215 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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