Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Comparison of the top-down and bottom-up approach to fabricate nanowire-based silicon/germanium heterostructuresWolfsteller, A. ; Geyer, N. ; Nguyen-Duc, T.-K. ; Das Kanungo, P. ; Zakharov, N.D. ; Reiche, M. ; Erfurth, W. ; Blumtritt, H. ; Kalem, S. ; Werner, P. ; Gösele, U.Thin solid films, 2010-02, Vol.518 (9), p.2555-2561 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Sb mediated formation of Ge/Si quantum dots: Growth and propertiesTonkikh, A.A. ; Zakharov, N.D. ; Novikov, A.V. ; Kudryavtsev, K.E. ; Talalaev, V.G. ; Fuhrmann, B. ; Leipner, H.S. ; Werner, P.Thin solid films, 2012-02, Vol.520 (8), p.3322-3325 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Enhanced electrical properties of nominally undoped Si/SiGe heterostructure nanowires grown by molecular beam epitaxyDas Kanungo, P. ; Wolfsteller, A. ; Zakharov, N.D. ; Werner, P. ; Gösele, U.Microelectronics, 2009-03, Vol.40 (3), p.452-455 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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4 |
Material Type: Artigo
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Growth phenomena of Si and Si/Ge nanowires on Si (1 1 1) by molecular beam epitaxyZakharov, N.D. ; Werner, P. ; Gerth, G. ; Schubert, L. ; Sokolov, L. ; Gösele, U.Journal of crystal growth, 2006-04, Vol.290 (1), p.6-10 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Aperiodic SiSn/Si multilayers for thermoelectric applicationsTonkikh, A.A. ; Zakharov, N.D. ; Eisenschmidt, C. ; Leipner, H.S. ; Werner, P.Journal of crystal growth, 2014-04, Vol.392, p.49-51 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Sn-rich cubic phase nanocrystals in a SiGe/Si(001) quantum wellTonkikh, A.A. ; Zakharov, N.D. ; Talalaev, V.G. ; Eisenschmidt, C. ; Schilling, J. ; Werner, P.Journal of crystal growth, 2015-09, Vol.425, p.172-176 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parametersYurasov, D.V. ; Drozdov, M.N. ; Zakharov, N.D. ; Novikov, A.V.Journal of crystal growth, 2014-06, Vol.396, p.66-70 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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Sb-modified growth of stacked Ge/Si(100) quantum dotsTonkikh, A.A. ; Zakharov, N.D. ; Pippel, E. ; Werner, P.Thin solid films, 2011-03, Vol.519 (11), p.3669-3673 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Misfit dislocation generation in SiGe epitaxial layers supersaturated with intrinsic point defectsVdovin, V.I. ; Zakharov, N.D.Thin solid films, 2008-11, Vol.517 (1), p.278-280 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Structure of UMo4O14 oxideZakharov, N.D. ; Pippel, E. ; Hillebrand, R. ; Werner, P.Progress in nuclear energy (New series), 2012-05, Vol.57, p.150-154 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |