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Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO2 (rutile) and (001) BaTiO3 single crystals
Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO2 (rutile) and (001) BaTiO3 single crystals
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Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO2 (rutile) and (001) BaTiO3 single crystals

LOTNYK, A ; GRAFF, A ; SENZ, S ; ZAKHAROV, N. D ; HESSE, D

Solid state sciences, 2008-06, Vol.10 (6), p.702-708 [Periódico revisado por pares]

Paris: Elsevier

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Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO 2 (rutile) and (001) BaTiO 3 single crystals
Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO 2 (rutile) and (001) BaTiO 3 single crystals
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Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO 2 (rutile) and (001) BaTiO 3 single crystals

Lotnyk, A. ; Graff, A. ; Senz, S. ; Zakharov, N.D. ; Hesse, D.

Solid state sciences, 2008, Vol.10 (6), p.702-708 [Periódico revisado por pares]

Elsevier Masson SAS

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3
Topotaxial Reaction Fronts in Complex Ba-Ti-Si Oxide Systems Studied by Transmission Electron Microscopy
Topotaxial Reaction Fronts in Complex Ba-Ti-Si Oxide Systems Studied by Transmission Electron Microscopy
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Topotaxial Reaction Fronts in Complex Ba-Ti-Si Oxide Systems Studied by Transmission Electron Microscopy

Hesse, D. ; Graff, A. ; Senz, Stephan ; Zakharov, N.D.

Materials science forum, 1999-01, Vol.294-296, p.597-600 [Periódico revisado por pares]

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4
Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates
Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates
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Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates

CHEN, Y ; ZAKHAROV, N. D ; WERNER, P ; LILIENTAL-WEBER, Z ; WASHBURN, J ; KLEM, J. F ; TSAO, J. Y

Applied physics letters, 1993-03, Vol.62 (13), p.1536-1538 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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5
Stress releasing mechanisms in In[sub 0. 2]Ga[sub 0. 8]As layers grown on misoriented GaAs [001] substrate
Stress releasing mechanisms in In[sub 0. 2]Ga[sub 0. 8]As layers grown on misoriented GaAs [001] substrate
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Stress releasing mechanisms in In[sub 0. 2]Ga[sub 0. 8]As layers grown on misoriented GaAs [001] substrate

Werner, P. ; Zakharov, N.D. ; Chen, Y. ; Liliental-Weber, Z. ; Washburn, J. ; Klem, J.F. ; Tsao, J.Y.

Applied physics letters, 1993-05, Vol.62:22 [Periódico revisado por pares]

United States

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6
Compositional nonuniformities and strain relaxation at misoriented In[sub x]Ga[sub (1[minus]x)]As/GaAs interfaces
Compositional nonuniformities and strain relaxation at misoriented In[sub x]Ga[sub (1[minus]x)]As/GaAs interfaces
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Compositional nonuniformities and strain relaxation at misoriented In[sub x]Ga[sub (1[minus]x)]As/GaAs interfaces

Zakharov, N.D. ; Werner, P. ; Chen, Y. ; Swider, W. ; Liliental-Weber, Z. ; Washburn, J. ; Klem, J.F. ; Tsao, J.Y.

Journal of electronic materials, 1993-11, Vol.22:11 [Periódico revisado por pares]

United States

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7
Sputtered and reactively grown epitaxial GdAlO{sub 3} films as buffer layers for c-oriented YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} films on R-sapphire
Sputtered and reactively grown epitaxial GdAlO{sub 3} films as buffer layers for c-oriented YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} films on R-sapphire
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Sputtered and reactively grown epitaxial GdAlO{sub 3} films as buffer layers for c-oriented YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} films on R-sapphire

Senz, S. ; Sieber, H. ; Zakharov, N.D. ; Hesse, D. ; Lorenz, M. ; Hochmuth, H.

United States: Materials Research Society, Pittsburgh, PA (United States) 1996

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8
High resolution transmission electron microscopy study of interface structures and growth defects in epitaxial Bi{sub 2}Sr{sub 2}Ca{sub {ital n}{minus}1}Cu{sub {ital n}}O{sub 4+2{ital n}+{delta}} films on SrTiO{sub 3} and LaAlO{sub 3}
High resolution transmission electron microscopy study of interface structures and growth defects in epitaxial Bi{sub 2}Sr{sub 2}Ca{sub {ital n}{minus}1}Cu{sub {ital n}}O{sub 4+2{ital n}+{delta}} films on SrTiO{sub 3} and LaAlO{sub 3}
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High resolution transmission electron microscopy study of interface structures and growth defects in epitaxial Bi{sub 2}Sr{sub 2}Ca{sub {ital n}{minus}1}Cu{sub {ital n}}O{sub 4+2{ital n}+{delta}} films on SrTiO{sub 3} and LaAlO{sub 3}

Zakharov, N.D. ; Hesse, D. ; Auge, J. ; Roskos, H.G. ; Kurz, H. ; Hoffschulz, H. ; Dreen, J. ; Stahl, H. ; Guentherodt, G.

Journal of Materials Research, 1996-10, Vol.11 (10)

United States

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