Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artículo
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A Stranski–Krastanov to Volmer–Weber transition in the growth mode of self-assembled quantum dotsOliphant, Ryn ; Coleman, Hunter J. ; Abramson, Matthew ; Sautter, Kathryn E. ; Simmonds, Paul J. ; Ratsch, ChristianJournal of crystal growth, 2024-08, Vol.640 (C), p.127761, Article 127761 [Revista revisada por pares]Netherlands: Elsevier B.VTexto completo disponible |
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2 |
Material Type: Artículo
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Characteristics of high-order silane based Si and SiGe epitaxial growth under 600Yoon, Dongmin ; Shin, Hyerin ; Oh, Seokmin ; Jo, Chunghee ; Lee, Kiseok ; Jung, Seonwoong ; Ko, Dae-HongJournal of crystal growth, 2024-04, Vol.632, p.127642, Article 127642 [Revista revisada por pares]Elsevier B.VTexto completo disponible |
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3 |
Material Type: Artículo
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Non-reversibility of crystal growth and Dissolution: Nanoscale direct observations and kinetics of transition through the saturation pointPiskunova, Natalia N.Journal of crystal growth, 2024-04, Vol.631, p.127614, Article 127614 [Revista revisada por pares]Elsevier B.VTexto completo disponible |
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4 |
Material Type: Artículo
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Low-defect-density SnSe2 films nucleated via thin layer crystallizationPonomarev, S.A. ; Zakhozhev, K.E. ; Rogilo, D.I. ; Gutakovsky, A.K. ; Kurus, N.N. ; Kokh, K.A. ; Sheglov, D.V. ; Milekhin, A.G. ; Latyshev, A.V.Journal of crystal growth, 2024-04, Vol.631, p.127615, Article 127615 [Revista revisada por pares]Elsevier B.VTexto completo disponible |
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5 |
Material Type: Artículo
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MBE growth of SnTe films on GaAs substrates with ZnTe buffer layersKobayashi, M. ; Nan, S.Journal of crystal growth, 2024-02, Vol.628, p.127531, Article 127531 [Revista revisada por pares]Texto completo disponible |
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6 |
Material Type: Artículo
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Thin film crystallization of oligoethylene glycol-benzothieno benzothiophene: Physical vapor deposition versus spin coatingJames, Ann Maria ; Gicevičius, Mindaugas ; Hofer, Sebastian ; Schrode, Benedikt ; Werzer, Oliver ; Devaux, Félix ; Geerts, Yves Henri ; Sirringhaus, Henning ; Resel, RolandJournal of crystal growth, 2024-02, Vol.627, p.127539, Article 127539 [Revista revisada por pares]Elsevier B.VTexto completo disponible |
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7 |
Material Type: Artículo
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InP-based quantum dot lasers emitting at 1.3 µmJoshi, V. ; Bauer, S. ; Sichkovskyi, V. ; Schnabel, F. ; Reithmaier, J.P.Journal of crystal growth, 2023-09, Vol.618, p.127328, Article 127328 [Revista revisada por pares]Elsevier B.VTexto completo disponible |
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8 |
Material Type: Artículo
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Surface morphology improvement by diethylzinc doping on metamorphic InAs on GaAs using MOVPEArai, Masakazu ; Nakagawa, Shota ; Hombu, Koki ; Hirata, Yasushi ; Maeda, KojiJournal of crystal growth, 2023-09, Vol.617, p.127274, Article 127274 [Revista revisada por pares]Elsevier B.VTexto completo disponible |
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9 |
Material Type: Artículo
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Heteroepitaxial growth of GaSb interfacial misfit array on GaAs substrate by molecular beam epitaxyFeng, Qingsong ; Dong, Mingli ; Gong, Ruixin ; Zheng, Xiantong ; Liu, Bingfeng ; Zhang, Dongliang ; Feng, Yulin ; Liu, YuanJournal of crystal growth, 2023-08, Vol.616, p.127260, Article 127260 [Revista revisada por pares]Elsevier B.VTexto completo disponible |
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10 |
Material Type: Artículo
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MOVPE studies of zincblende GaN on 3C-SiC/Si(001)Wade, T.J. ; Gundimeda, A. ; Kappers, M.J. ; Frentrup, M. ; Fairclough, S.M. ; Wallis, D.J. ; Oliver, R.A.Journal of crystal growth, 2023-06, Vol.611, p.127182, Article 127182 [Revista revisada por pares]Elsevier B.VTexto completo disponible |