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1
Theoretical considerations on natural ventilation by thermal buoyancy
Theoretical considerations on natural ventilation by thermal buoyancy
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Theoretical considerations on natural ventilation by thermal buoyancy

Andersen, Karl T

1995

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2
Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
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Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper

Chang, S-C ; Shieh, J-M ; Lin, K-C ; Dai, B-T ; Wang, T-C ; Chen, C-F ; Feng, M-S ; Li, Y-H ; Lu, C-P

2001

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3
Effect of catalyst on growth behavior of carbon nanotube synthesizing by microwave heating thermal chemical vapor deposition process
Effect of catalyst on growth behavior of carbon nanotube synthesizing by microwave heating thermal chemical vapor deposition process
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Effect of catalyst on growth behavior of carbon nanotube synthesizing by microwave heating thermal chemical vapor deposition process

Chen, S-C ; Shih, L-Y ; Chang, Y-C ; Tu, G-C ; Lin, I-N

2001

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4
Verification and characterization of a mathematical model of particle size distribution
Verification and characterization of a mathematical model of particle size distribution
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Verification and characterization of a mathematical model of particle size distribution

Chen, Y ; Zhang, Y ; Barber, E M ; Bundy, D S

1998

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5
Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices
Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices
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Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices

Cheng, Kangguo ; Lee, Jinju ; Chen, Zhi ; Shah, Samir A ; Hess, Karl ; Leburton, Jean-Pierre ; Lyding, Joseph W

2001

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6
Patterning technology of carbon nanotubes for field emission displays
Patterning technology of carbon nanotubes for field emission displays
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Patterning technology of carbon nanotubes for field emission displays

Cho, Y-R ; Jin Ho Lee ; Song, Y-H ; Kang, S-Y ; Jung, M-Y ; Hwang, C-S ; Cho, Kyoung Ik

2001

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7
100 nm gate hole openings for low voltage driving field emission display applications
100 nm gate hole openings for low voltage driving field emission display applications
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100 nm gate hole openings for low voltage driving field emission display applications

Choi, JO ; Akinwande, AI ; Smith, H I

2001

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8
Surface states on n-type Al sub(0.24)Ga sub(0.76)As characterized by deep-level transient spectroscopy
Surface states on n-type Al sub(0.24)Ga sub(0.76)As characterized by deep-level transient spectroscopy
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Surface states on n-type Al sub(0.24)Ga sub(0.76)As characterized by deep-level transient spectroscopy

Choi, K J ; Lee, J-L

2001

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9
Effects of photowashing treatment on electrical properties of a GaAs metal-semiconductor field-effect transistor
Effects of photowashing treatment on electrical properties of a GaAs metal-semiconductor field-effect transistor
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Effects of photowashing treatment on electrical properties of a GaAs metal-semiconductor field-effect transistor

Choi, Kyoung Jin ; Lee, Jong-Lam ; Mun, Jae Kyoung ; Kim, Heacheon

2002

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10
Modern vane anemometers and their use for fume hood monitoring
Modern vane anemometers and their use for fume hood monitoring
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Modern vane anemometers and their use for fume hood monitoring

Downing, Peter M

1997

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