Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0.1-㎛ InGa0.53As/InAl0.52As HEMT Using a New Sidewall ProcessSung-WonKim ; Hong-JuPark ; Sun-YoungOh ; Dae-YoungKo ; Dae-HyunKim ; Kwang-SeokSeoJournal of the Korean Physical Society, 2002, 41(6), , pp.918-921 [Periódico revisado por pares]한국물리학회Texto completo disponível |
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2 |
Material Type: Artigo
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0.2% N을 첨가한 수퍼 2상 스테인리스강의 열처리 조건에 따른 특성 평가 : 제3보: 부식특성안석환(Seok-Hwan Ahn) ; 강흥주(Heung-Joo Kang) ; 서현수(Hyun-Soo Seo) ; 남기우(Ki-Woo Nam) ; 이건찬(Kun-Chan Lee)한국해양공학회지, 2009, 23(5), 90, pp.85-91 [Periódico revisado por pares]한국해양공학회Texto completo disponível |
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3 |
Material Type: Artigo
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2-Dimensional Holographic Grating Formation in Chalcogenide Thin FilmsLee, Jung-Tae ; Yeo, Choel-Ho ; Chung, Hong-BayTransactions on Electrical and Electronic Materials, 2004, 5(1), , pp.34-37 [Periódico revisado por pares]한국전기전자재료학회Texto completo disponível |
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4 |
Material Type: Artigo
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2 Dimensional Voltage Distribution Measurement of YBCO Thin Film during S/N transitionMori, Masato ; Nishioka, Hideyoshi ; Baba, Jumpei ; Nitta, Tanzo ; Kumagai, Toshiya ; Shibuya, MasatoyoJournal of International Council of Electrical Engineering, 2011, Vol.1 (2), p.229-233 [Periódico revisado por pares]Texto completo disponível |
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5 |
Material Type: Artigo
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200 MeV Ag 15+ ion beam irradiation induced modifications in spray deposited MoO 3 thin films by fluence variationRathika, R ; Kovendhan, M ; Joseph, D. Paul ; Vijayarangamuthu, K ; Kumar, A. Sendil ; Venkateswaran, C ; Asokan, K ; Jeyakumar, S. JohnsonNuclear engineering and technology, 2019, Vol.51 (8), p.1983-1990 [Periódico revisado por pares]Texto completo disponível |
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6 |
Material Type: Artigo
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3.5-Inch QCIF AMOLED Panels with Ultra-low-Temperature Polycrystalline Silicon Thin Film Transistor on Plastic SubstrateKim, Yong-Hae ; Chung, Choong-Heui ; Moon, Jae-Hyun ; Lee, Su-Jae ; Kim, Gi-Heon ; Song, Yoon-HoETRI journal, 2008-02, Vol.30 (2), p.308-314 [Periódico revisado por pares]한국전자통신연구원Texto completo disponível |
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7 |
Material Type: Artigo
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380‐nm Ultraviolet Light‐Emitting Diodes with InGaN/AlGaN MQW StructureBae, Sung‐Bum ; Kim, Sung‐Bok ; Kim, Dong‐Churl ; Nam, Eun Soo ; Lim, Sung‐Mook ; Son, Jeong‐Hwan ; Jo, Yi‐SangETRI Journal, 2013, 35(4), , pp.566-570 [Periódico revisado por pares]Electronics and Telecommunications Research Institute (ETRI)Texto completo disponível |
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8 |
Material Type: Artigo
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63Ni 밀봉선원용 Ni 전기도금 박막에서 Ni 농도가 잔류응력에 미치는 영향윤필근(Pilgeun Yoon) ; 박덕용(Deok-Yong Park)Biuletyn Uniejowski, 2017-02, Vol.50 (1), p.29-34 [Periódico revisado por pares]한국표면공학회Texto completo disponível |
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9 |
Material Type: Artigo
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A 32 nm NPN SOI HBT with Programmable Power Gain and 839 GHzV f t BV CEO ProductMisra, Prasanna Kumar ; Qureshi, SJournal of semiconductor technology and science, 2014, Vol.14 (6), p.712-717Texto completo disponível |
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10 |
Material Type: Artigo
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a-axis Contribution to the Polarization Value in (117)/(200)-Oriented Bi3.75La0.25Ti3O12 Thin Films Deposited on Pt(111)/Ti/SiO2/Si SubstrateSungmin Park ; Jaemoon Pak ; Doyoung Park ; Hyeonsik Cheong ; Gwangseo ParkJournal of the Korean Physical Society, 2009-02, p.926-929 [Periódico revisado por pares]한국물리학회Texto completo disponível |