Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Reactive sputter etching of Al in BCl 3Lehmann, H.W. ; Widmer, R.Microelectronic engineering, 1983, Vol.1 (1), p.3-27 [Periódico revisado por pares]Elsevier B.VSem texto completo |
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2 |
Material Type: Artigo
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Oxygen ion-beam etch resistance of metal-free and organosilicon resist materialsGokan, Hiroshi ; Ohnishi, Yoshitake ; Saigo, KazuhideMicroelectronic engineering, 1983, Vol.1 (4), p.251-262 [Periódico revisado por pares]Elsevier B.VSem texto completo |
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3 |
Material Type: Artigo
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Application of polysiloxane resists to multilayer resists systems for high-resolution microlithographyRosilio, Charles ; Rosilio, André ; Buiguez, FrançoisMicroelectronic engineering, 1983, Vol.1 (3), p.197-208 [Periódico revisado por pares]Elsevier B.VSem texto completo |
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4 |
Material Type: Artigo
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Reactive sputter etching of Al in BCl3Lehmann, H.W. ; Widmer, R.Microelectronic engineering, 1983-09, Vol.1 (1), p.3-27 [Periódico revisado por pares]Texto completo disponível |
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5 |
Material Type: Artigo
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Ion-beam etched multi-level resist technique for electroplating of submicron gold absorber patternsSchneider-Gmelch, B. ; Tischer, P.Microelectronic engineering, 1984, Vol.2 (4), p.227-243 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Redeposition in ion millingMüller, K.P. ; Pelka, J.Microelectronic engineering, 1987, Vol.7 (1), p.91-101 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Magnetically enhanced reactive ion etching (MERIE) with different field configurationsMüller, K.P. ; Heinrich, F. ; Mader, H.Microelectronic engineering, 1989, Vol.10 (1), p.55-67 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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Improved shallow trench isolation for sub-halfmicron CMOSCabanal, J.P. ; Haond, M.ESSDERC '91: 21st European Solid State Device Research Conference, 1991, Vol.15 (1), p.651-654 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Design and characteristics of a GaAs BMFETSchweeger, G. ; Della Corte, F.G. ; Hartnagel, H.L.ESSDERC '91: 21st European Solid State Device Research Conference, 1991, Vol.15 (1), p.313-316 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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High-performance VLSI photomask with a molybdenum silicide filmShigetomi, A. ; Matsuda, S. ; Watakabe, Y. ; Kato, T.Microelectronic engineering, 1991, Vol.14 (2), p.73-86 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |