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1
Dynamic and structural stability of cubic vanadium nitride
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Dynamic and structural stability of cubic vanadium nitride

Mei, A. B. ; Hellman, O. ; Wireklint, N. ; Schlepütz, C. M. ; Sangiovanni, D. G. ; Alling, B. ; Rockett, A. ; Hultman, L. ; Petrov, I. ; Greene, J. E.

Physical review. B, Condensed matter and materials physics, 2015-02, Vol.91 (5), p.054101, Article 054101 [Peer Reviewed Journal]

United States: American Physical Society

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2
Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering
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Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering

Mei, A. B. ; Howe, B. M. ; Zhang, C. ; Sardela, M. ; Eckstein, J. N. ; Hultman, L. ; Rockett, A. ; Petrov, I. ; Greene, J. E.

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-11, Vol.31 (6), p.061516 [Peer Reviewed Journal]

United States

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3
Ti2AlC coatings deposited by High Velocity Oxy-Fuel spraying
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Ti2AlC coatings deposited by High Velocity Oxy-Fuel spraying

FRODELIUS, Jenny ; SONESTEDT, Marie ; BJÖRKLUND, Stefan ; PALMQUIST, Jens-Petter ; STILLER, Krystyna ; HÖGBERG, Hans ; HULTMAN, Lars

Surface & coatings technology, 2008-08, Vol.202 (24), p.5976-5981 [Peer Reviewed Journal]

Amsterdam: Elsevier

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4
Sputter deposition from a Ti2AlC target: Process characterization and conditions for growth of Ti2AlC
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Sputter deposition from a Ti2AlC target: Process characterization and conditions for growth of Ti2AlC

FRODELIUS, J ; EKLUND, P ; BECKERS, M ; PERSSON, P. O. A ; HÖGBERG, H ; HULTMAN, L

Thin solid films, 2010, Vol.518 (6), p.1621-1626 [Peer Reviewed Journal]

Amsterdam: Elsevier

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5
Phase transformation in κ- and γ-Al2O3 coatings on cutting tool inserts
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Phase transformation in κ- and γ-Al2O3 coatings on cutting tool inserts

Trinh, D.H. ; Back, K. ; Pozina, G. ; Blomqvist, H. ; Selinder, T. ; Collin, M. ; Reineck, I. ; Hultman, L. ; Högberg, H.

Surface & coatings technology, 2009-03, Vol.203 (12), p.1682-1688 [Peer Reviewed Journal]

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6
Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates
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Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates

EKLUND, P ; MURUGAIAH, A ; EMMERLICH, J ; CZIGANY, Zs ; FRODELIUS, J ; BARSOUM, M. W ; HÖGBERG, H ; HULTMAN, L

Journal of crystal growth, 2007-06, Vol.304 (1), p.264-269 [Peer Reviewed Journal]

Amsterdam: Elsevier

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7
Nanoindentation studies of single-crystal (001)-, (011)-, and (111)-oriented TiN layers on MgO
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Nanoindentation studies of single-crystal (001)-, (011)-, and (111)-oriented TiN layers on MgO

Ljungcrantz, H. ; Odén, M. ; Hultman, L. ; Greene, J. E. ; Sundgren, J.-E.

Journal of Applied Physics, 1996-12, Vol.80 (12), p.6725-6733 [Peer Reviewed Journal]

United States

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8
Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering
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Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering

Valcheva, E ; Birch, J ; Persson, P O. Å ; Tungasmita, S ; Hultman, L

Journal of applied physics, 2006-12, Vol.100 (12), p.123514-123514-6 [Peer Reviewed Journal]

United States: American Institute of Physics

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9
Direct current magnetron sputtering deposition of nanocomposite alumina — zirconia thin films
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Direct current magnetron sputtering deposition of nanocomposite alumina — zirconia thin films

Trinh, D.H. ; Kubart, T. ; Nyberg, T. ; Ottosson, M. ; Hultman, L. ; Högberg, H.

Thin solid films, 2008-10, Vol.516 (23), p.8352-8358 [Peer Reviewed Journal]

Amsterdam: Elsevier B.V

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10
The influence of substrate temperature and Al mobility on the microstructural evolution of magnetron sputtered ternary Ti-Al-N thin films
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The influence of substrate temperature and Al mobility on the microstructural evolution of magnetron sputtered ternary Ti-Al-N thin films

Beckers, M ; Höglund, C ; Baehtz, C ; Martins, R M. S ; Persson, P O. Å ; Hultman, L ; Möller, W

Journal of applied physics, 2009-09, Vol.106 (6), p.064915-064915-7 [Peer Reviewed Journal]

United States: American Institute of Physics

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