skip to main content
Idioma:
Primo Advanced Search
Primo Advanced Search Query Term
Primo Advanced Search Query Term
Primo Advanced Search Query Term
Primo Advanced Search prefilters
Busca Simples
Resultados 1 2 3 4 5 next page
Mostrar Somente
Refinado por: idioma: Coreano remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Plasma Density, Electron Temperature, Excited Xenon Density and Ion-Induced Secondary Electron Emission Coefficient for the Vacuum Ultraviolet Luminous Efficiency in an Alternating
Plasma Density, Electron Temperature, Excited Xenon Density and Ion-Induced Secondary Electron Emission Coefficient for the Vacuum Ultraviolet Luminous Efficiency in an Alternating
Material Type:
Artigo 		Adicionar ao Meu Espaço

Plasma Density, Electron Temperature, Excited Xenon Density and Ion-Induced Secondary Electron Emission Coefficient for the Vacuum Ultraviolet Luminous Efficiency in an Alternating

Eun Ha Choi ; Byung Hee Hong ; Byung Joo Park ; Guangsup Cho ; Philyong Oh ; Yoonho Seo ; Yun Ki Kim

Journal of the Korean Physical Society, 2007, 51(3), , pp.951-955 [Periódico revisado por pares]

한국물리학회

Texto completo disponível

Citações Citado por
2
Temperature Dependence of Electron Mobility in Uniaxial Strained nMOSFETs
Temperature Dependence of Electron Mobility in Uniaxial Strained nMOSFETs
Material Type:
Artigo 		Adicionar ao Meu Espaço

Temperature Dependence of Electron Mobility in Uniaxial Strained nMOSFETs

Sun, Wookyung ; Shin, Hyungsoon

Journal of semiconductor technology and science, 2014, Vol.14 (2), p.146-152

Texto completo disponível

Citações Citado por
3
Langmuir probe measurements of electron density and electron temperature in early stage of laser-produced carbon plasma
Langmuir probe measurements of electron density and electron temperature in early stage of laser-produced carbon plasma
Material Type:
Artigo 		Adicionar ao Meu Espaço

Langmuir probe measurements of electron density and electron temperature in early stage of laser-produced carbon plasma

Hong, C ; Chae, H.B ; Lee, S.B ; Han, Y.J ; Jung, J.H ; Cho, B.K ; Park, H ; Kim, C.K ; Kim, S.O

Transactions on electrical and electronic materials, 2000, Vol.1 (1), p.32-39 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
4
Regular Paper / Langmuir probe measurements of electron density and electron temperature in early stage of a laser - produced carbon plasma
Regular Paper / Langmuir probe measurements of electron density and electron temperature in early stage of a laser - produced carbon plasma
Material Type:
Artigo 		Adicionar ao Meu Espaço

Regular Paper / Langmuir probe measurements of electron density and electron temperature in early stage of a laser - produced carbon plasma

C . Hong ; H . B . Chae ; S . B . Lee ; Y . J . Han ; J . H . Jung ; B . K . Cho ; H . Park ; C . K . Kim ; S . O . Kim

Transactions on electrical and electronic materials, 2000-03, Vol.1 (1), p.32 [Periódico revisado por pares]

한국전기전자재료학회

Texto completo disponível

Citações Citado por
5
Measurement of Electron Temperature and Number Density and Their Effects on Reactive Species Formation in a DC Underwater Capillary Discharge
Measurement of Electron Temperature and Number Density and Their Effects on Reactive Species Formation in a DC Underwater Capillary Discharge
Material Type:
Artigo 		Adicionar ao Meu Espaço

Measurement of Electron Temperature and Number Density and Their Effects on Reactive Species Formation in a DC Underwater Capillary Discharge

Ahmed, Muhammad Waqar ; Rahman, Md. Shahinur ; Choi, Sooseok ; Shaislamov, Ulugbek ; Yang, Jong-Keun ; Suresh, Rai ; Lee, Heon-Ju

Applied science and convergence technology, 2017, Vol.26 (5), p.118-128

Texto completo disponível

Citações Citado por
6
Effect of Boron Content and Temperature on Interactions and Electron Transport in BGaN Bulk Ternary Nitride Semiconductors
Effect of Boron Content and Temperature on Interactions and Electron Transport in BGaN Bulk Ternary Nitride Semiconductors
Material Type:
Artigo 		Adicionar ao Meu Espaço

Effect of Boron Content and Temperature on Interactions and Electron Transport in BGaN Bulk Ternary Nitride Semiconductors

Bouchefra, Yasmina ; Sari, Nasr-Eddine Chabane

Transactions on electrical and electronic materials, 2017-02, Vol.18 (1), p.7-12 [Periódico revisado por pares]

한국전기전자재료학회

Texto completo disponível

Citações Citado por
7
Development of High-Temperature Solders: Contribution of Transmission Electron Microscopy
Development of High-Temperature Solders: Contribution of Transmission Electron Microscopy
Material Type:
Artigo 		Adicionar ao Meu Espaço

Development of High-Temperature Solders: Contribution of Transmission Electron Microscopy

Bae, Jee-Hwan ; Shin, Keesam ; Lee, Joon-Hwan ; Kim, Mi-Yang ; Yang, Cheol-Woong

Applied microscopy, 2015, Vol.45 (2), p.89-94 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
8
Modeling negative and positive temperature dependence of the gate leakage current in GaN high-electron mobility transistors
Modeling negative and positive temperature dependence of the gate leakage current in GaN high-electron mobility transistors
Material Type:
Artigo 		Adicionar ao Meu Espaço

Modeling negative and positive temperature dependence of the gate leakage current in GaN high-electron mobility transistors

Mao, Ling-Feng

ETRI journal, 2022-06, Vol.44 (3), p.504-511 [Periódico revisado por pares]

한국전자통신연구원

Texto completo disponível

Citações Citado por
9
Electron-excitation Temperature with the Relative Optical-spectrumIntensity in an Atmospheric-pressure Ar-plasma Jet
Electron-excitation Temperature with the Relative Optical-spectrumIntensity in an Atmospheric-pressure Ar-plasma Jet
Material Type:
Artigo 		Adicionar ao Meu Espaço

Electron-excitation Temperature with the Relative Optical-spectrumIntensity in an Atmospheric-pressure Ar-plasma Jet

Han, Gookhee ; Cho, Guangsup

Applied science and convergence technology, 2017, Vol.26 (6), p.201-207

Texto completo disponível

Citações Citado por
10
Determination of Reorganization Energy from the Temperature Dependence of Electron Transfer Rate Constant for Hydroquinone-tethered Self-assembled Monolayers (SAMs)
Determination of Reorganization Energy from the Temperature Dependence of Electron Transfer Rate Constant for Hydroquinone-tethered Self-assembled Monolayers (SAMs)
Material Type:
Artigo 		Adicionar ao Meu Espaço

Determination of Reorganization Energy from the Temperature Dependence of Electron Transfer Rate Constant for Hydroquinone-tethered Self-assembled Monolayers (SAMs)

Park, Won-choul ; Hong, Hun-Gi

Bulletin of the Korean Chemical Society, 2006, 27(3), , pp.381-385 [Periódico revisado por pares]

대한화학회

Texto completo disponível

Citações Citado por
Resultados 1 2 3 4 5 next page

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Mostrar Somente

  1. Revistas revisadas por pares (875)

Data de Publicação 

De até
Refinar
  1. Antes de1981  (16)
  2. 1981Até1991  (45)
  3. 1992Até2002  (159)
  4. 2003Até2014  (605)
  5. Após 2014  (234)
  6. Mais opções open sub menu

Idioma 

  1. Inglês  (37)
  2. Japonês  (1)
  3. Mais opções open sub menu

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.