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Reduction of 1/ f noise in graphene after electron-beam irradiation

Zahid Hossain, Md ; Rumyantsev, Sergey ; Shur, Michael S. ; Balandin, Alexander A.

Applied physics letters, 2013-04, Vol.102 (15) [Periódico revisado por pares]

United States

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Título:
Reduction of 1/ f noise in graphene after electron-beam irradiation
Autor: Zahid Hossain, Md ; Rumyantsev, Sergey ; Shur, Michael S. ; Balandin, Alexander A.
Assuntos: CARRIERS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CRYSTAL DEFECTS ; ELECTRON BEAMS ; FLUCTUATIONS ; GRAPHENE ; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ; INTEGRATED CIRCUITS ; IRRADIATION ; KEV RANGE 10-100 ; MOBILITY ; NANOSCIENCE AND NANOTECHNOLOGY ; NOISE ; RADIATION DOSES ; RADIOWAVE RADIATION ; RAMAN SPECTRA ; RAMAN SPECTROSCOPY ; SENSORS ; SPECTRAL DENSITY
É parte de: Applied physics letters, 2013-04, Vol.102 (15)
Descrição: We investigated experimentally the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reduces with increasing concentration of defects induced by irradiation. The increased amount of structural disorder in graphene under irradiation was verified with micro-Raman spectroscopy. The bombardment of graphene devices with 20-keV electrons reduced the noise spectral density, SI/I2 (I is the source-drain current) by an order-of magnitude at the radiation dose of 104 μC/cm2. We analyzed the observed noise reduction in the limiting cases of the mobility and carrier number fluctuation mechanisms. The obtained results are important for the proposed graphene applications in analog, mixed-signal, and radio-frequency systems, integrated circuits and sensors.
Editor: United States
Idioma: Inglês

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Reduction of 1/ f noise in graphene after electron-beam irradiation

Zahid Hossain, Md ; Rumyantsev, Sergey ; Shur, Michael S. ; Balandin, Alexander A.

United States

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