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InP- and GaAs-Based Photonic Power Converters Under O-Band Laser Illumination: Performance Analysis and Comparison

Beattie, Meghan N ; Helmers, Henning ; Forcade, Gavin P ; Valdivia, Christopher E ; Hohn, Oliver ; Hinzer, Karin

Photovoltaics, IEEE Journal of, 2023, Vol.13, p.113-121

IEEE

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  • Título:
    InP- and GaAs-Based Photonic Power Converters Under O-Band Laser Illumination: Performance Analysis and Comparison
  • Autor: Beattie, Meghan N ; Helmers, Henning ; Forcade, Gavin P ; Valdivia, Christopher E ; Hohn, Oliver ; Hinzer, Karin
  • Assuntos: 1310 nm ; Current density ; III-V ; InGaAs ; InGaAsP ; Laser beams ; laser power converter ; Lighting ; Measurement by laser beam ; metamorphic ; o-band ; optical power transmission ; Photonic band gap ; photonic power converter (PPC) ; Photonics ; power-over-fiber ; Substrates
  • É parte de: Photovoltaics, IEEE Journal of, 2023, Vol.13, p.113-121
  • Descrição: Photonic power converters (PPCs), which convert narrow-band light to electricity, are essential components in power-by-light systems. When designed for telecommunications wavelengths such as the O-band, near 1310 nm, the devices are well-suited to power-over-fiber applications. Despite the potential for very high power conversion efficiencies ($\mathbf {>50\%}$), PPCs can be adversely affected by high-intensity nonuniform illumination conditions. In this work, we characterized two O-band PPC designs based on: high-quality InGaAsP absorber material lattice-matched to an InP substrate, and metamorphic InGaAs absorber material lattice-mismatched to a GaAs substrate, a more cost-effective and scalable alternative. We measured each device under O-band laser illumination with five beam profiles having peak-to-average ratios ranging from 2 to 11. Both devices were insensitive to the beam uniformity for input illumination with average irradiance below 2 W/cm$\mathbf {^{2}}$ over their 5.4-mm$\mathbf {^{2}}$ active areas, but exhibited better open-circuit voltages under larger, more uniform illumination profiles at higher incident powers. Measured efficiencies reached 52.8% and 48.7% for the lattice-matched and mismatched devices, respectively. Distributed circuit modeling results suggested that both lateral conduction losses and localized heating effects were responsible for the measured dependence on beam-size. Our work demonstrates the potential for O-band PPCs, presenting two highly efficient designs suitable for powering devices requiring $\mathbf {\lesssim 250}$ mW, with an appropriate illumination profile.
  • Editor: IEEE
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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