Effect of various factors upon the stoichiometry of GaAs homoepitaxial layers grown by LPE
GOVORKOV, A. V ; NOVIKOV, A. G ; MILVIDSKII, M. G ; SHLENSKII, A. A ; FOMIN, V. G ; YUGOVA, T. G
Physica status solidi. A, Applied research, 1994-07, Vol.144 (1), p.121-130Berlin: Wiley-VCH
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