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0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

Enoki, Takatomo ; Ito, Hiroshi ; Ikuta, Kenji ; Umeda, Yohtaro ; Ishii, Yasunobu

Microwave and optical technology letters, 1996-02, Vol.11 (3), p.135-139 [Periódico revisado por pares]

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Título:
0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD
Autor: Enoki, Takatomo ; Ito, Hiroshi ; Ikuta, Kenji ; Umeda, Yohtaro ; Ishii, Yasunobu
Assuntos: HEMT ; InGaAs ; recess-etch stopper ; ring oscillator ; threshold voltage
É parte de: Microwave and optical technology letters, 1996-02, Vol.11 (3), p.135-139
Notas: istex:DC060E95F54E37445DBDF9E54FD222BC65363729
ark:/67375/WNG-00NVKRV0-C
ArticleID:MOP7
Descrição: High‐performance InAlAs/InGaAs HEMTs with a highly uniform threshold voltage are fabricated using an InP‐recess‐etch stopper. Recess‐depth control is improved, and design of the device characteristics is made easier. An SCFL ring oscillator with a propagation delay time of 6.6 ps/gate is achieved with these HEMTs. © 1996 John Wiley & Sons, Inc.
Editor: New York: Wiley Subscription Services, Inc., A Wiley Company
Idioma: Inglês

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