Point defects in silicon carbide as a promising basis for spectroscopy of single defects with controllable quantum states at room temperature

Soltamov, V. A. ; Tolmachev, D. O. ; Il’in, I. V. ; Astakhov, G. V. ; Dyakonov, V. V. ; Soltamova, A. A. ; Baranov, P. G.

Physics of the solid state, 2015-05, Vol.57 (5), p.891-899 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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