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An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions

Rather, Muzafar Ahmad ; Ravi, Loganathan ; Yu, Tung-Yuan ; Wu, Chien-Ting ; Lin, Kun-Lin ; Lai, Kun-Yu ; Chyi, Jen-Inn

Applied physics letters, 2023-07, Vol.123 (1) [Periódico revisado por pares]

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Título:
An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions
Autor: Rather, Muzafar Ahmad ; Ravi, Loganathan ; Yu, Tung-Yuan ; Wu, Chien-Ting ; Lin, Kun-Lin ; Lai, Kun-Yu ; Chyi, Jen-Inn
Assuntos: Alignment ; Aluminum nitride ; Applied physics ; Conduction bands ; Energy bands ; Gallium nitrides ; Heterojunctions ; Photoelectric emission ; Valence band
É parte de: Applied physics letters, 2023-07, Vol.123 (1)
Descrição: The range of applications of the common III-nitride semiconductors (Al, Ga, In)N can be extended through bandgap engineering with the inclusion of boron and forming their heterojunctions. In this study, the band alignments of B(Al, Ga)N alloys with common III-nitrides are investigated using x-ray photoemission spectroscopy. A type-I straddling-gap band alignment is identified for a B0.06Ga0.94N/AlN heterojunction with a valence band offset (VBO) and conduction band offset (CBO) of 1.1 ± 0.2 and 1.8 ± 0.2 eV, respectively, whereas a type-II band alignment is observed on a B0.06Ga0.94N/GaN heterojunction with a VBO of 0.3 ± 0.2 and a CBO of 0.2 ± 0.2 eV. In addition, a type-I band alignment is deduced for both the B0.13Al0.87N/AlN and B0.13Al0.87N/GaN heterojunctions.
Editor: Melville: American Institute of Physics
Idioma: Inglês

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