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Spin-orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

Li, Peng ; Liu, Tao ; Chang, Houchen ; Kalitsov, Alan ; Zhang, Wei ; Csaba, Gyorgy ; Li, Wei ; Richardson, Daniel ; DeMann, August ; Rimal, Gaurab ; Dey, Himadri ; Jiang, J S ; Porod, Wolfgang ; Field, Stuart B ; Tang, Jinke ; Marconi, Mario C ; Hoffmann, Axel ; Mryasov, Oleg ; Wu, Mingzhong

Nature communications, 2016-09, Vol.7 (1), p.12688-12688, Article 12688 [Periódico revisado por pares]

England: Nature Publishing Group

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  • Título:
    Spin-orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy
  • Autor: Li, Peng ; Liu, Tao ; Chang, Houchen ; Kalitsov, Alan ; Zhang, Wei ; Csaba, Gyorgy ; Li, Wei ; Richardson, Daniel ; DeMann, August ; Rimal, Gaurab ; Dey, Himadri ; Jiang, J S ; Porod, Wolfgang ; Field, Stuart B ; Tang, Jinke ; Marconi, Mario C ; Hoffmann, Axel ; Mryasov, Oleg ; Wu, Mingzhong
  • Assuntos: Anisotropy ; Computer engineering ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Electrons
  • É parte de: Nature communications, 2016-09, Vol.7 (1), p.12688-12688, Article 12688
  • Notas: ObjectType-Article-1
    SourceType-Scholarly Journals-1
    ObjectType-Feature-2
    content type line 23
    AC02-06CH11357
    Materials Sciences and Engineering Division
    National Science Foundation (NSF)
    Defense Advanced Research Projects Agency (DARPA)
    Center for Spintronic Materials Interfaces and Novel Architectures (C-SPIN)
    USDOE Office of Science (SC), Basic Energy Sciences (BES)
  • Descrição: As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe12O19 bilayer where the BaFe12O19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe12O19 film when the film is magnetized by an in-plane magnetic field. It can reduce or increase the switching field of the BaFe12O19 film by as much as about 500 Oe when the film is switched with an out-of-plane field.
  • Editor: England: Nature Publishing Group
  • Idioma: Inglês
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