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Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology

Endo, K. ; Shuichi Noda ; Masahara, M. ; Kubota, T. ; Ozaki, T. ; Samukawa, S. ; Yongxun Liu ; Ishii, K. ; Ishikawa, Y. ; Sugimata, E. ; Matsukawa, T. ; Takashima, H. ; Yamauchi, H. ; Suzuki, E.

IEEE transactions on electron devices, 2006-08, Vol.53 (8), p.1826-1833 [Periódico revisado por pares]

New York, NY: IEEE

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Título:
Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology
Autor: Endo, K. ; Shuichi Noda ; Masahara, M. ; Kubota, T. ; Ozaki, T. ; Samukawa, S. ; Yongxun Liu ; Ishii, K. ; Ishikawa, Y. ; Sugimata, E. ; Matsukawa, T. ; Takashima, H. ; Yamauchi, H. ; Suzuki, E.
Assuntos: Applied sciences ; Carrier mobility ; CMOS ; Damage ; damaged-free ; Design. Technologies. Operation analysis. Testing ; Devices ; double-gate MOSFET (DG-MOSFET) ; Electron mobility ; Electronics ; Etching ; Exact sciences and technology ; Integrated circuits ; Microelectronic fabrication (materials and surfaces technology) ; Nanocomposites ; Nanomaterials ; Nanostructure ; neutral beam (NB) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors ; utrathin-channel fabrication
É parte de: IEEE transactions on electron devices, 2006-08, Vol.53 (8), p.1826-1833
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: A high aspect ratio and damage-free vertical ultrathin channel for a vertical-type double-gate MOSFET was fabricated by using low-energy neutral-beam etching (NBE). NBE can completely eliminate the charge build-up and photon-radiation damages caused by the plasma. The fabricated FinFETs realize a higher device performance (i.e., higher electron mobility) than that obtained by using a conventional reactive-ion etching. The improved mobility is well explained by the NB-etched atomically flat surface. These results strongly support the effectiveness of the NB technology for nanoscale CMOS fabrication
Editor: New York, NY: IEEE
Idioma: Inglês

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Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology

Endo, K. ; Shuichi Noda ; Masahara, M. ; Kubota, T. ; Ozaki, T. ; Samukawa, S. ; Yongxun Liu ; Ishii, K. ; Ishikawa, Y. ; Sugimata, E. ; Matsukawa, T. ; Takashima, H. ; Yamauchi, H. ; Suzuki, E.

New York, NY: IEEE

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