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Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices

Tanaka, A ; Oritsuki, Y ; Kikuchihara, H ; Miyake, M ; Mattausch, H J ; Miura-Mattausch, Mitiko ; Liu, Y ; Green, K

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2072-2080 [Periódico revisado por pares]

New York, NY: IEEE

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Título:
Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices
Autor: Tanaka, A ; Oritsuki, Y ; Kikuchihara, H ; Miyake, M ; Mattausch, H J ; Miura-Mattausch, Mitiko ; Liu, Y ; Green, K
Assuntos: Applied sciences ; Compact model ; Compound structure devices ; Devices ; Drift ; drift region ; Electric potential ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; high voltage MOSFET ; Integrated circuit modeling ; Logic gates ; Mathematical model ; Mathematical models ; MOSFETs ; Optimization ; resistor model ; Resistors ; scalable ; Semiconductor device modeling ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; surface-potential-based model ; Transistors ; Voltage
É parte de: IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2072-2080
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descrição: High-voltage (HV) metal-oxide-semiconductor field-effect transistors (MOSFETs) of the laterally diffused metal-oxide-semiconductor (LDMOS) type enable applications over a wide range of bias voltages by optimizing the combined structure of MOSFET and drift region at its drain side. We report a physically accurate compact resistor model of the LDMOS drift region, adapted to the special requirements of the combined structure with a MOSFET. In particular, the reported resistor model captures the effects of the 2-D current flow in the drift region with its complicated bias dependence. The resistor model considers two device-structure-dependent potentials, namely, the internal node potential within the highly resistive drift region and the potential underneath the gate overlap region. The consistent potential-based description over the complete LDMOS device is the key modeling technology for enabling the accurate reproduction of the bias-dependent 2-D current flow and the resulting I - V characteristics for a wide range of structure variations with a small number of only six fitting parameters. The reported quasi-2-D resistor model is implemented in the second-generation Hiroshima-university STARC IGFET Model-High Voltage (HiSIM-HV) compact models for HV MOSFETs and is expected to be useful for both, optimization of LDMOS circuits and devices.
Editor: New York, NY: IEEE
Idioma: Inglês

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Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices

Tanaka, A ; Oritsuki, Y ; Kikuchihara, H ; Miyake, M ; Mattausch, H J ; Miura-Mattausch, Mitiko ; Liu, Y ; Green, K

New York, NY: IEEE

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