2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

Kumar, Sanjay ; Goel, Ekta ; Singh, Kunal ; Singh, Balraj ; Singh, Prince Kumar ; Baral, Kamalaksha ; Jit, Satyabrata

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.960-968 [Periódico revisado por pares]

New York: IEEE

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