Idioma:

p - n junction formation in boron-deposited silicon by laser-induced diffusion

Narayan, J. ; Young, R. T. ; Wood, R. F. ; Christie, W. H.

Appl. Phys. Lett.; (United States), 1978-08, Vol.33 (4), p.338-340 [Periódico revisado por pares]

United States

Texto completo disponível

Citações Citado por

Enviar para

Título:
p - n junction formation in boron-deposited silicon by laser-induced diffusion
Autor: Narayan, J. ; Young, R. T. ; Wood, R. F. ; Christie, W. H.
Assuntos: BORON ; CARRIER MOBILITY ; CRYSTAL DOPING ; DEPOSITION ; DIFFUSION ; DIRECT ENERGY CONVERTERS ; EFFICIENCY ; ELECTRIC CONDUCTIVITY ; ELECTRICAL PROPERTIES ; ELECTROMAGNETIC RADIATION ; ELECTRON MICROSCOPY ; ELEMENTS ; JUNCTION DIODES ; JUNCTIONS ; LASER RADIATION ; MASS SPECTROSCOPY ; MICROSCOPY ; MOBILITY ; P-N JUNCTIONS ; PHOTOELECTRIC CELLS ; PHOTOVOLTAIC CELLS ; PHYSICAL PROPERTIES ; RADIATIONS ; SEMICONDUCTOR DEVICES ; SEMICONDUCTOR DIODES ; SEMICONDUCTOR JUNCTIONS ; SEMIMETALS ; SILICON ; SOLAR CELLS ; SOLAR ENERGY ; SPECTROSCOPY 140501 -- Solar Energy Conversion-- Photovoltaic Conversion
É parte de: Appl. Phys. Lett.; (United States), 1978-08, Vol.33 (4), p.338-340
Notas: None
Descrição: A technique for p-n junction formation in silicon, based on deposition of boron on silicon at room temperature followed by laser irradiation is described. Transmission electron microscopy and electrical measurements indicate that as a result of the laser irradiation the boron is dissolved in the silicon and becomes electrically active. Diode characteristics of p-n junctions produced by this technique are quite good. The dopant profile distribution has been obtained using secondary ion mass spectrometry and is in qualitative agreement with simplified theoretical calculations.
Editor: United States
Idioma: Inglês

Links

View this record in Osti.gov

Voltar para lista de resultados

Realização: Logos de Redes Sociais:

p - n junction formation in boron-deposited silicon by laser-induced diffusion

Narayan, J. ; Young, R. T. ; Wood, R. F. ; Christie, W. H.

United States

Buscando em bases de dados remotas. Favor aguardar.