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Towards Efficient Electrically-Driven Deep UVC Lasing: Challenges and Opportunities

Nikishin, Sergey (TTU) ; Bernussi, Ayrton (TTU) ; Karpov, Sergey

2023

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  • Título:
    Towards Efficient Electrically-Driven Deep UVC Lasing: Challenges and Opportunities
  • Autor: Nikishin, Sergey (TTU) ; Bernussi, Ayrton (TTU) ; Karpov, Sergey
  • Assuntos: AlGaN ; deep-UV laser diodes ; electron leakage ; metalorganic vapor-phase epitaxy ; molecular-beam epitaxy ; n- and p-doping ; polarization doping ; threading dislocations ; tunnel junction
  • Notas: Nikishin, S., Bernussi, A., & Karpov, S.. 2023. Towards Efficient Electrically-Driven Deep UVC Lasing: Challenges and Opportunities. Nanomaterials, 13(1). https://doi.org/10.3390/nano13010185
    https://hdl.handle.net/2346/92986
    https://doi.org/10.3390/nano13010185
  • Descrição: The major issues confronting the performance of deep-UV (DUV) laser diodes (LDs) are reviewed along with the different approaches aimed at performance improvement. The impact of threading dislocations on the laser threshold current, limitations on heavy n- and p-doping in Al-rich AlGaN alloys, unavoidable electron leakage into the p-layers of (0001) LD structures, implementation of tunnel junctions, and non-uniform hole injection into multiple quantum wells in the active region are discussed. Special attention is paid to the current status of n- and p-type doping and threading dislocation density reduction, both being the factors largely determining the performance of DUV-LDs. It is shown that most of the above problems originate from intrinsic properties of the wide-bandgap AlGaN semiconductors, which emphasizes their fundamental role in the limitation of deep-UV LD performance. Among various remedies, novel promising technological and design approaches, such as high-temperature face-to-face annealing and distributed polarization doping, are discussed. Whenever possible, we provided a comparison between the growth capabilities of MOVPE and MBE techniques to fabricate DUV-LD structures.
  • Data de criação/publicação: 2023
  • Idioma: Inglês

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