Formation of cylindrical n / p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial 'SI' / 'SI' ('Ge')

Nelson Liebentritt de Almeida Braga 1962- A Buczkowski; H R Kirk; G A Rozgonyi

New York v.64, n.11, p.1410-2, mar. 1994 Applied Physics Letters

New York 1994

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