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0.1-μm gate-length pseudomorphic HEMT's

CHAO, P. C ; TIBERIO, R. C ; DUH, K.-H. G ; SMITH, P. M ; BALLINGALL, J. M ; LESTER, L. F ; LEE, B. R ; JABRA, A ; GIFFORD, G. G

IEEE electron device letters, 1987, Vol.8 (10), p.489-491 [Periódico revisado por pares]

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Título:
0.1-μm gate-length pseudomorphic HEMT's
Autor: CHAO, P. C ; TIBERIO, R. C ; DUH, K.-H. G ; SMITH, P. M ; BALLINGALL, J. M ; LESTER, L. F ; LEE, B. R ; JABRA, A ; GIFFORD, G. G
Assuntos: Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors
É parte de: IEEE electron device letters, 1987, Vol.8 (10), p.489-491
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (HEMT's) with a gate length of 0.1 mu m have been successfully fabricated. The HEMT's exhibit a maximum transconductance of 540 mS/mm with excellent pinch-off characteristics. A maximum stable gain (MSG) as high as 18.2 dB was measured at 18 GHz. At 60 GHz the device has demonstrated a minimum noise figure of 2.5 dB with an associated gain of similar to 6 dB. These are the best gain and noise results reported to date for HEMT's.
Editor: New York, NY: Institute of Electrical and Electronics Engineers
Idioma: Inglês

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