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Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

Offermans, P. ; Koenraad, P. M. ; Wolter, J. H. ; Granados, D. ; García, J. M. ; Fomin, V. M. ; Gladilin, V. N. ; Devreese, J. T.

Applied physics letters, 2005-09, Vol.87 (13), p.131902-131902-3 [Periódico revisado por pares]

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Título:
Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs
Autor: Offermans, P. ; Koenraad, P. M. ; Wolter, J. H. ; Granados, D. ; García, J. M. ; Fomin, V. M. ; Gladilin, V. N. ; Devreese, J. T.
É parte de: Applied physics letters, 2005-09, Vol.87 (13), p.131902-131902-3
Descrição: We present an atomic-scale analysis of the indium distribution of self-assembled In(Ga)As quantum rings (QRs) which are formed from InAs quantum dots by capping with a thin layer of GaAs and subsequent annealing. We find that the size and shape of QRs as observed by cross-sectional scanning tunneling microscopy (X-STM) deviate substantially from the ring-shaped islands as observed by atomic force microscopy on the surface of uncapped QR structures. We show unambiguously that X-STM images the remaining quantum dot material whereas the AFM images the erupted quantum dot material. The remaining dot material shows an asymmetric indium-rich crater-like shape with a depression rather than an opening at the center and is responsible for the observed electronic properties of QR structures. These quantum craters have an indium concentration of about 55% and a diameter of about 20 nm which is consistent with the observed electronic radius of QR structures.
Editor: American Institute of Physics
Idioma: Inglês

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