Growth and doping characteristics of InGaN films grown by low pressure MOCVD

Tong, Y.Z. ; Li, F. ; Zhang, G.Y. ; Yang, Z.J. ; Jin, S.X. ; Ding, X.M. ; Gan, Z.Z.

Solid state communications, 1998-12, Vol.109 (3), p.173-176 [Periódico revisado por pares]

Oxford: Elsevier Ltd

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