Publisher's Note: "Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors" [J. Appl. Phys. 93, 10046 (2003)]

Joshi, R P ; Sridhara, V ; Jogai, B ; Shah, P ; del Rosario, R D

Journal of applied physics, 2012-01, Vol.111 (2), p.029901-029901-1 [Periódico revisado por pares]

American Institute of Physics

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