Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0.13-mum low-/kappa/-Cu CMOS logic-based technology for 2.1-gb high data rate read-channelLien, W Y ; Tsai, T L ; Chen, S M ; Wu, C MIEEE transactions on electron devices, 2004-05, Vol.51 (5), p.757-763 [Periódico revisado por pares]Texto completo disponível |
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2 |
Material Type: Artigo
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0.13-μm low-κ-Cu CMOS logic-based technology for 2.1-gb high data rate read-channelJyh Chyurn Guo ; Lien, W.Y. ; Tsai, T.L. ; Chen, S.M. ; Wu, C.M.IEEE transactions on electron devices, 2004-05, Vol.51 (5), p.757-763 [Periódico revisado por pares]Texto completo disponível |
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3 |
Material Type: Ata de Congresso
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0.13-μm optical lithography for random logic devices using 248-nm attenuated phase-shifting masksChen, Yung-Tin ; Lin, Chia-Hui ; Lin, Hua Tai ; Hsieh, Hung-Chang ; Yu, Shinn Sheng ; Yen, AnthonySPIE 2000Texto completo disponível |
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4 |
Material Type: Ata de Congresso
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0.18 Micron BiCMOS Process with Novel Structure SiGeC HBTLiu, Donghua ; Qian, Wensheng ; Chen, Xiong Bin ; Chen, Fan ; Hu, Jun ; Xiao, Sheng'An ; Wang, Yungchung ; Chiu, Tzu-YinECS transactions, 2011, Vol.34 (1), p.173-181Texto completo disponível |
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5 |
Material Type: Artigo
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0.18 mm 21-27 GHz CMOS UWB LNA with 9.3 plus or minus 1.3 dB gain and 103.9 plus or minus 8.1 ps group delayYang, H-Y ; Lin, Y-S ; Chen, C-CElectronics letters, 2008-08, Vol.44 (17), p.1-1 [Periódico revisado por pares]Sem texto completo |
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6 |
Material Type: Artigo
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0.18 mm 21-27 GHz CMOS UWB LNA with 9.3±1.3 dB gain and 103.9±8.1 ps group delayYang, H-Y ; Lin, Y-S ; Chen, C-CElectronics letters, 2008-08, Vol.44 (17), p.1 [Periódico revisado por pares]Stevenage: The Institution of Engineering & TechnologySem texto completo |
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7 |
Material Type: Artigo
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0.18 mu m 3.1-10.6 GHz CMOS UWB LNA with 11.4 plus or minus 0.4 dB gain and 100.7 plus or minus 17.4 ps group-delayLee, J-H ; Chen, C-C ; Lin, Y-SElectronics letters, 2007-11, Vol.43 (24), p.1-1 [Periódico revisado por pares]Sem texto completo |
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8 |
Material Type: Ata de Congresso
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0.18 um dual Vt MOSFET process and energy-delay measurementZhongjian Chen ; Diaz, C. ; Plummer, J.D. ; Min Cao ; Greene, W.International Electron Devices Meeting. Technical Digest, 1996, p.851-854IEEETexto completo disponível |
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9 |
Material Type: Ata de Congresso
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0.18 um modular triple self-aligned embedded split-gate flash memoryMih, R. ; Harrington, J. ; Houlihan, K. ; Hyun Koo Lee ; Chan, K. ; Johnson, J. ; Bomy Chen ; Jiang Yan ; Schmidt, A. ; Gruensfelder, C. ; Kisang Kim ; Shum, D. ; Lo, C. ; Lee, D. ; Levi, A. ; Chung Lam2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104), 2000, p.120-121IEEETexto completo disponível |
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10 |
Material Type: Artigo
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0.18 [micro sign]m 21–27 GHz CMOS UWB LNA with 9.3±1.3 dB gain and 103.9±8.1 ps group delayYang, H.-Y. ; Lin, Y.-S. ; Chen, C.-C.Electronics letters, 2008, Vol.44 (17), p.1014 [Periódico revisado por pares]Sem texto completo |