skip to main content
Idioma:
Refinado por: Nome da Publicação: Semiconductors remover nível superior: Recursos Online remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film
Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film
Material Type:
Artigo 		Adicionar ao Meu Espaço

Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film

Sobolev, N. A. ; Sakharov, V. I. ; Serenkov, I. T. ; Bondarev, A. D. ; Karabeshkin, K. V. ; Fomin, E. V. ; Kalyadin, A. E. ; Mikoushkin, V. M. ; Shek, E. I. ; Sherstnev, E. V.

Semiconductors (Woodbury, N.Y.), 2019-04, Vol.53 (4), p.415-418 [Periódico revisado por pares]

Moscow: Pleiades Publishing

Texto completo disponível

Citações Citado por
2
Density dependence of electron mobility in the accumulation mode for fully depleted SOI films
Density dependence of electron mobility in the accumulation mode for fully depleted SOI films
Material Type:
Artigo 		Adicionar ao Meu Espaço

Density dependence of electron mobility in the accumulation mode for fully depleted SOI films

Naumova, O. V. ; Zaitseva, E. G. ; Fomin, B. I. ; Ilnitsky, M. A. ; Popov, V. P.

Semiconductors (Woodbury, N.Y.), 2015-10, Vol.49 (10), p.1316-1322 [Periódico revisado por pares]

Moscow: Pleiades Publishing

Texto completo disponível

Citações Citado por
3
Dielectric Properties of Oligonucleotides on the Surface of Si Nanosandwich Structures
Dielectric Properties of Oligonucleotides on the Surface of Si Nanosandwich Structures
Material Type:
Artigo 		Adicionar ao Meu Espaço

Dielectric Properties of Oligonucleotides on the Surface of Si Nanosandwich Structures

Fomin, M. A. ; Chernev, A. L. ; Bagraev, N. T. ; Klyachkin, L. E. ; Emelyanov, A. K. ; Dubina, M. V.

Semiconductors (Woodbury, N.Y.), 2018-05, Vol.52 (5), p.612-614 [Periódico revisado por pares]

Moscow: Pleiades Publishing

Texto completo disponível

Citações Citado por
4
Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation
Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation
Material Type:
Artigo 		Adicionar ao Meu Espaço

Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation

Myasnikov, A. M. ; Obodnikov, V. I. ; Seryapin, V. G. ; Tishkovskii, E. G. ; Fomin, B. I. ; Cherepov, E. I.

Semiconductors (Woodbury, N.Y.), 1997-03, Vol.31 (3), p.279-282 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
5
Kinetics of the redistribution of an impurity in quasiperiodic structures appearing in heavily boron-doped silicon irradiated by boron ions
Kinetics of the redistribution of an impurity in quasiperiodic structures appearing in heavily boron-doped silicon irradiated by boron ions
Material Type:
Artigo 		Adicionar ao Meu Espaço

Kinetics of the redistribution of an impurity in quasiperiodic structures appearing in heavily boron-doped silicon irradiated by boron ions

Myasnikov, A. M.

Semiconductors (Woodbury, N.Y.), 1997-06, Vol.31 (6), p.600 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
6
Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals
Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals
Material Type:
Artigo 		Adicionar ao Meu Espaço

Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals

Smagina, Zn. V. ; Zinovyev, V. A. ; Rodyakina, E. E. ; Fomin, B. I. ; Stepikhova, M. V. ; Yablonskiy, A. N. ; Gusev, S. A. ; Novikov, A. V. ; Dvurechenskii, A. V.

Semiconductors (Woodbury, N.Y.), 2019-10, Vol.53 (10), p.1329-1333 [Periódico revisado por pares]

Moscow: Pleiades Publishing

Texto completo disponível

Citações Citado por
7
Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface
Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface
Material Type:
Artigo 		Adicionar ao Meu Espaço

Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface

Smagina, Zh. V. ; Zinovyev, V. A. ; Krivyakin, G. K. ; Rodyakina, E. E. ; Kuchinskaya, P. A. ; Fomin, B. I. ; Yablonskiy, A. N. ; Stepikhova, M. V. ; Novikov, A. V. ; Dvurechenskii, A. V.

Semiconductors (Woodbury, N.Y.), 2018-09, Vol.52 (9), p.1150-1155 [Periódico revisado por pares]

Moscow: Pleiades Publishing

Texto completo disponível

Citações Citado por

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.