Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Ata de Congresso
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0-1 Mixed Integer Programming for a Newly Merged Metropolis to Develop MSW Management SystemsWu, E. M-Y ; Li-De Shie2012 International Conference on Biomedical Engineering and Biotechnology, 2012, p.1140-1143IEEETexto completo disponível |
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2 |
Material Type: Artigo
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0-1 Piecewise linearization approach for interval-parameter nonlinear programming: application to environmental management under uncertaintyLI, Y. P ; HUANG, G. H ; YANG, Z. F ; NIE, S. LCanadian journal of civil engineering, 2009-06, Vol.36 (6), p.1071-1084 [Periódico revisado por pares]Ottawa, ON: National Research Council of CanadaTexto completo disponível |
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3 |
Material Type: Artigo
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0-3 piezoelectric composite film with high d33 coefficientCHEN, X.-D ; YANG, D.-B ; JIANG, Y.-D ; WU, Z.-M ; DAN LI ; GOU, F.-J ; YANG, J.-DSensors and actuators. A. Physical., 1998-03, Vol.65 (2-3), p.194-196 [Periódico revisado por pares]Lausanne: Elsevier ScienceTexto completo disponível |
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4 |
Material Type: Ata de Congresso
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0.1 /spl mu/m RFCMOS on high resistivity substrates for system on chip (SOC) applicationsYang, J.-Y. ; Benaissa, K. ; Crenshaw, D. ; Williams, B. ; Sridhar, S. ; Ai, J. ; Boselli, G. ; Zhao, S. ; Tang, S.-P. ; Mahalingam, N. ; Ashburn, S. ; Madhani, P. ; Blythe, T. ; Shichijo, H.Digest. International Electron Devices Meeting, 2002, p.667-670IEEETexto completo disponível |
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5 |
Material Type: Ata de Congresso
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0.1 μm In02Al08Sb-InAs HEMT low-noise amplifiers for ultralow-power applicationsChou, C. ; Lange, M.D. ; Bennett, B.R. ; Boos, J.B. ; Yang, J.M. ; Papanicolaou, N.A. ; Lin, C.H. ; Lee, L.J. ; Nam, P.S. ; Gutierrez, A.L. ; Farkas, D.S. ; Tsai, R.S. ; Wojtowicz, M. ; Chin, T.P. ; Oki, A.K.2007 IEEE International Electron Devices Meeting, 2007, p.617-620IEEETexto completo disponível |
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6 |
Material Type: Ata de Congresso
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0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applicationsYANG, J.-Y ; BENAISSA, K ; ASHBURN, S ; MADHANI, P ; BLYTHE, T ; SHICHIJO, H ; CRENSHAW, D ; WILLIAMS, B ; SRIDHAR, S ; AI, J ; BOSELLI, G ; ZHAO, S ; TANG, S.-P ; MAHALINGAM, NPiscataway NJ: IEEE 2002Texto completo disponível |
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7 |
Material Type: Artigo
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0.13-/0.15-micron production reticle process window qualification procedure for 200-mm manufacturing fabChang, Zih-Wen ; Wu, Chen-Ming ; Mo, Mabel ; Shieh, Chin-Chung ; Cheng, Ds ; Chen, Chun-Chien ; Yang, Richard Y ; Randall, David W ; Yu, Wen-ChengProceedings of SPIE, 2004-04, Vol.SPIE-5446, p.200-208Texto completo disponível |
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8 |
Material Type: Ata de Congresso
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0.13-/0.15-μm production reticle process window qualification procedure for 200-mm manufacturing fabChang, Zih-Wen ; Wu, Chen-Ming ; Mo, Mabel ; Shieh, Chin-Chung ; Cheng, D.S ; Chen, Chun-Chien ; Yang, Richard Y ; Randall, David W ; Yu, Wen-ChengSPIE 2004Texto completo disponível |
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9 |
Material Type: Ata de Congresso
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0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETsChou, Hsueh-Liang ; Su, P. C. ; Ng, J. C. W. ; Wang, P. L. ; Lu, H. T. ; Lee, C. J. ; Syue, W. J. ; Yang, S. Y. ; Tseng, Y. C. ; Cheng, C. C. ; Yao, C. W. ; Liou, R. S. ; Jong, Y. C. ; Tsai, J. L. ; Cai, Jun ; Tuan, H. C. ; Huang, Chih-Fang ; Gong, Jeng2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.401-404IEEETexto completo disponível |
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10 |
Material Type: Artigo
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0.18 mm 21-27 GHz CMOS UWB LNA with 9.3 plus or minus 1.3 dB gain and 103.9 plus or minus 8.1 ps group delayYang, H-Y ; Lin, Y-S ; Chen, C-CElectronics letters, 2008-08, Vol.44 (17), p.1-1 [Periódico revisado por pares]Sem texto completo |