Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVDBai, J. ; Wang, T. ; Li, H.D. ; Jiang, N. ; Sakai, S.Journal of crystal growth, 2001-09, Vol.231 (1), p.41-47 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Ata de Congresso
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0-3 Polymer/Barium Titanate Nano Structures Based Flexible Piezoelectric FilmSappati, Kiran Kumar ; Bhadra, Sharmistha2018 International Flexible Electronics Technology Conference (IFETC), 2018, p.1-2IEEETexto completo disponível |
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3 |
Material Type: Artigo
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[001]-oriented crystalline Potassium-Sodium Niobate thin film fabricated at low temperature for use in piezoelectric energy harvesterKim, Jong-Hyun ; Woo, Jong-Un ; Yee, Yeon-Jeong ; Kim, In-Su ; Shin, Ho-Sung ; Hwang, Hyun-Gyu ; Kweon, Sang Hyo ; Choi, Hyun-Ju ; Nahm, SahnApplied surface science, 2021-01, Vol.537, p.147871, Article 147871 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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0.1-20 THz ultra-broadband perfect absorber via a flat multi-layer structureXu, Gongjie ; Zhang, Jun ; Zang, Xiaofei ; Sugihara, Okihiro ; Zhao, Hongwei ; Cai, BinOptics express, 2016-10, Vol.24 (20), p.23177-23185 [Periódico revisado por pares]United States: Optica Publishing GroupTexto completo disponível |
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5 |
Material Type: Artigo
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0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTAMATSUBARA, Y ; SAKAI, T ; ISHIGAMI, T ; ANDO, K ; HORIUCHI, TThin solid films, 1995-12, Vol.270 (1-2), p.537-543 [Periódico revisado por pares]Lausanne: Elsevier ScienceTexto completo disponível |
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6 |
Material Type: Ata de Congresso
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0.12 /spl mu/m Optical Lithography Performance Using an Alternating DUV Phase Shift MaskTrouiller, Y. ; Buffet, N. ; Mourier, T. ; Schiavone, P. ; Quere, Y.Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135), 1998, p.77-80IEEETexto completo disponível |
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7 |
Material Type: Ata de Congresso
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0.13-μm optical lithography for random logic devices using 248-nm attenuated phase-shifting masksChen, Yung-Tin ; Lin, Chia-Hui ; Lin, Hua Tai ; Hsieh, Hung-Chang ; Yu, Shinn Sheng ; Yen, AnthonySPIE 2000Texto completo disponível |
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8 |
Material Type: Ata de Congresso
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0.18-μm technology at contact level: deep-UV process development by tuning NA/o and using a bottom antireflective coatingAmblard, Gilles R ; Chollet, Jean-Paul ESPIE 1999Texto completo disponível |
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9 |
Material Type: Report
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0.25-in. FISSION CHAMBER WITH CADMIUM SLEEVESalmon, P.G.Canada 1960Sem texto completo |
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10 |
Material Type: Artigo
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0.25 μm trilevel lithography using KTI 747 negative resist for the planarizing layerKUNG, E. H ; TIMKO, A. GJournal of the Electrochemical Society, 1990-11, Vol.137 (11), p.3568-3573 [Periódico revisado por pares]Pennington, NJ: Electrochemical SocietyTexto completo disponível |