Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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[0001]-Oriented InN Nanoleaves and Nanowires: Synthesis, Growth Mechanism and Optical PropertiesLiu, Min ; Liu, Hui-Qiang ; Chu, Sheng ; Peng, Ru-Fang ; Chu, Shi-JinActa metallurgica sinica : English letters, 2016-09, Vol.29 (9), p.820-826 [Periódico revisado por pares]Beijing: The Chinese Society for MetalsTexto completo disponível |
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2 |
Material Type: Artigo
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[011] waveguide stripe direction n-i-p-n heterostructure InP optical modulatorOgiso, Y ; Ohiso, Y ; Shibata, Y ; Kohtoku, MElectronics letters, 2014-04, Vol.50 (9), p.688-690 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
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3 |
Material Type: Artigo
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0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100Kashio, N ; Kurishima, K ; Ida, M ; Matsuzaki, HElectronics letters, 2014-10, Vol.50 (22), p.1631-1633 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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4 |
Material Type: Artigo
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0.4–3.0 GHz highly efficient harmonic-tuned power amplifierMa, Chuanhui ; Liu, Ying ; Pan, Wensheng ; Tang, YouxiElectronics letters, 2015-11, Vol.51 (23), p.1911-1913 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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5 |
Material Type: Artigo
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0.6-V 2.1-mW RF receiver based on passive mixing and master–slave common-mode rejection technique in 65 nm CMOSChen, Chao ; Wu, JianhuiElectronics letters, 2016-03, Vol.52 (5), p.335-336 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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6 |
Material Type: Artigo
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0.9 V third-order 132 MHz single-OPAMP analogue filter in 28 nm CMOSDe Matteis, M ; Donno, A ; D'Amico, S ; Baschirotto, AElectronics letters, 2017-01, Vol.53 (2), p.77-79 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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7 |
Material Type: Artigo
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0D–2D Schottky heterostructure coupling of FeS nanosheets and Co9S8 nanoparticles for long-term industrial-level water oxidationLiu, Hai-Jun ; Yu, Ning ; Yuan, Xiao-Qing ; Zhao, Hui-Ying ; Zhang, Xin-Yu ; Chai, Yong-Ming ; Dong, BinNano research, 2023-04, Vol.16 (4), p.5929-5937 [Periódico revisado por pares]Beijing: Tsinghua University PressTexto completo disponível |
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8 |
Material Type: Artigo
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0D Perovskites: Unique Properties, Synthesis, and Their ApplicationsSun, Siqi ; Lu, Min ; Gao, Xupeng ; Shi, Zhifeng ; Bai, Xue ; Yu, William W. ; Zhang, YuAdvanced science, 2021-12, Vol.8 (24), p.e2102689-n/a [Periódico revisado por pares]Germany: John Wiley & Sons, IncTexto completo disponível |
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9 |
Material Type: Artigo
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1.1 THz tenth harmonic mixer based on planar GaAs Schottky diodeZhang, Bo ; Lv, Xiaolin ; He, Jie ; Xing, Dong ; Fan, Yong ; Chen, XiaodongIET microwaves, antennas & propagation, 2019-09, Vol.13 (11), p.1799-1803 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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10 |
Material Type: Artigo
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1,2-Dichlorotetrafluorocyclobutene: gas-phase molecular structure and quadratic force field from an electron-diffraction and ab initio studyThomassen, Hanne ; Hedberg, KennethJournal of physical chemistry (1952), 1990-06, Vol.94 (12), p.4847-4850 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |