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248 nm cathodoluminescence in Al{sub 1-x}In{sub x}N(0001) thin films grown on lattice-matched Ti{sub 1-y}Zr{sub y}N(111) seed layers by low temperature magnetron sputter epitaxy
248 nm cathodoluminescence in Al{sub 1-x}In{sub x}N(0001) thin films grown on lattice-matched Ti{sub 1-y}Zr{sub y}N(111) seed layers by low temperature magnetron sputter epitaxy
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248 nm cathodoluminescence in Al{sub 1-x}In{sub x}N(0001) thin films grown on lattice-matched Ti{sub 1-y}Zr{sub y}N(111) seed layers by low temperature magnetron sputter epitaxy

Seppaenen, T. ; Hultman, L. ; Birch, J.

Applied physics letters, 2006-10, Vol.89 (18) [Periódico revisado por pares]

United States

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2
Carbide and nanocomposite thin films in the Ti–Pt–C system
Carbide and nanocomposite thin films in the Ti–Pt–C system
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Carbide and nanocomposite thin films in the Ti–Pt–C system

Lewin, Erik ; Buchholt, Kristina ; Lu, Jun ; Hultman, Lars ; Spetz, Anita Lloyd ; Jansson, Ulf

Thin solid films, 2010-07, Vol.518 (18), p.5104-5109 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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3
Comment on "Pulsed laser deposition and properties of M(n+1)AX(x) phase formulated Ti3SiC2 thin films
Comment on "Pulsed laser deposition and properties of M(n+1)AX(x) phase formulated Ti3SiC2 thin films
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Comment on "Pulsed laser deposition and properties of M(n+1)AX(x) phase formulated Ti3SiC2 thin films

Eklund, Per ; Palmquist, JP ; Wilhelmsson, O ; Jansson, U ; Emmerlich, Jens ; Högberg, Hans ; Hultman, Lars

Tribology letters, 2004-11, Vol.17 (4), p.977 [Periódico revisado por pares]

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4
Deposition of single-crystal Ti{sub 2}AlN thin films by reactive magnetron sputtering from a 2Ti:Al compound target
Deposition of single-crystal Ti{sub 2}AlN thin films by reactive magnetron sputtering from a 2Ti:Al compound target
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Deposition of single-crystal Ti{sub 2}AlN thin films by reactive magnetron sputtering from a 2Ti:Al compound target

Joelsson, T. ; Flink, A. ; Birch, J. ; Hultman, L.

Journal of applied physics, 2007-10, Vol.102 (7) [Periódico revisado por pares]

United States

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5
Deviations from Vegard's rule in Al{sub 1-x}In{sub x}N (0001) alloy thin films grown by magnetron sputter epitaxy
Deviations from Vegard's rule in Al{sub 1-x}In{sub x}N (0001) alloy thin films grown by magnetron sputter epitaxy
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Deviations from Vegard's rule in Al{sub 1-x}In{sub x}N (0001) alloy thin films grown by magnetron sputter epitaxy

Seppaenen, T. ; Hultman, L. ; Birch, J. ; Beckers, M. ; Kreissig, U. ; Institute for Ion Beam Physics and Materials Science

Journal of applied physics, 2007-02, Vol.101 (4) [Periódico revisado por pares]

United States

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6
Direct current magnetron sputtering deposition of nanocomposite alumina — zirconia thin films
Direct current magnetron sputtering deposition of nanocomposite alumina — zirconia thin films
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Direct current magnetron sputtering deposition of nanocomposite alumina — zirconia thin films

Trinh, D.H. ; Kubart, T. ; Nyberg, T. ; Ottosson, M. ; Hultman, L. ; Högberg, H.

Thin solid films, 2008-10, Vol.516 (23), p.8352-8358 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
Dynamic and structural stability of cubic vanadium nitride
Dynamic and structural stability of cubic vanadium nitride
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Dynamic and structural stability of cubic vanadium nitride

Mei, A. B. ; Hellman, O. ; Wireklint, N. ; Schlepütz, C. M. ; Sangiovanni, D. G. ; Alling, B. ; Rockett, A. ; Hultman, L. ; Petrov, I. ; Greene, J. E.

Physical review. B, Condensed matter and materials physics, 2015-02, Vol.91 (5), p.054101, Article 054101 [Periódico revisado por pares]

United States: American Physical Society

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8
Effects of high-flux low-energy (20--100 eV) ion irradiation during deposition on the microstructure and preferred orientation of Ti[sub 0. 5]Al[sub 0. 5]N alloys grown by ultra-high-vacuum reactive magnetron sputtering
Effects of high-flux low-energy (20--100 eV) ion irradiation during deposition on the microstructure and preferred orientation of Ti[sub 0. 5]Al[sub 0. 5]N alloys grown by ultra-high-vacuum reactive magnetron sputtering
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Effects of high-flux low-energy (20--100 eV) ion irradiation during deposition on the microstructure and preferred orientation of Ti[sub 0. 5]Al[sub 0. 5]N alloys grown by ultra-high-vacuum reactive magnetron sputtering

Adibi, F. ; Petrov, I. ; Greene, J.E. ; Hultman, L. ; Sundgren, J.

Journal of applied physics, 1993-06, Vol.73:12 [Periódico revisado por pares]

United States

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9
Electronic-grade GaN(0001)/Al{sub 2}O{sub 3}(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target
Electronic-grade GaN(0001)/Al{sub 2}O{sub 3}(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target
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Electronic-grade GaN(0001)/Al{sub 2}O{sub 3}(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target

Junaid, M. ; Hsiao, C.-L. ; Palisaitis, J. ; Jensen, J. ; Persson, P. O. A. ; Hultman, L. ; Birch, J.

Applied physics letters, 2011-04, Vol.98 (14) [Periódico revisado por pares]

United States

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10
Enhanced hardness in lattice-matched single-crystal TiN/V sub 0. 6 Nb sub 0. 4 N superlattices
Enhanced hardness in lattice-matched single-crystal TiN/V sub 0. 6 Nb sub 0. 4 N superlattices
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Enhanced hardness in lattice-matched single-crystal TiN/V sub 0. 6 Nb sub 0. 4 N superlattices

Mirkarimi, P.B. ; Hultman, L. ; Barnett, S.A.

Applied physics letters, 1990-12, Vol.57:25 [Periódico revisado por pares]

United States

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