Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVDBai, J. ; Wang, T. ; Li, H.D. ; Jiang, N. ; Sakai, S.Journal of crystal growth, 2001-09, Vol.231 (1), p.41-47 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Ata de Congresso
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(0, 0) C2 Swan band spectrum for temperature measurementsPellerin, Stéphane ; Musiol, Karol ; Motret, Olivier ; Pokrzywka, Bartlomej ; Chapelle, JosephSem texto completo |
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3 |
Material Type: Artigo
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0-1 Test and Recurrence Analysis for Chaotic to Quasi Periodic Transition of Floating Potential Fluctuations in DC Magnetron Sputtering PlasmaSabavath, G. K.Plasma physics reports, 2020-06, Vol.46 (6), p.658-666 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
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4 |
Material Type: Ata de Congresso
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0.040 rad(Si)/s total dose testing of Renesas parts proposed for the Europa Clipper missionvan Vonno, N. W. ; Gill, J. S. ; Ballou, F. C. ; Newman, W. H.2019 IEEE Radiation Effects Data Workshop, 2019, p.1-8IEEESem texto completo |
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5 |
Material Type: Artigo
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0:1 content of soybean germplasm resources in Northeast ChinaLu Jingliang ; Wu Bailing ; Yi CuiwenCrop Genetic Resources, 1987Sem texto completo |
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6 |
Material Type: Ata de Congresso
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0.1-/spl mu/m p/sup +/-GaAs gate HJFETs with f/sub T/=121 GHz fabricated using all dry-etching and selective MOMBE growthWada, S. ; Furuhata, N. ; Tokushima, M. ; Fukaishi, M. ; Hida, H. ; Maeda, T.Proceedings of International Electron Devices Meeting, 1995, p.197-200IEEETexto completo disponível |
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7 |
Material Type: Ata de Congresso
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0.1/spl mu/m poly-Si thin film transistors for system-on-panel (SoP) applicationsBing-Yue Tsui ; Chia-Pin Lin ; Chih-Feng Huang ; Yi-Hsuan XiaoIEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005, p.911-914IEEETexto completo disponível |
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8 |
Material Type: Ata de Congresso
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0.2 Hz Plasma-Focus-based source of fast neutrons and hard x rays for applicationsMoreno, C. ; Raspa, V. ; Di Lorenzo, F. ; Lazarte, A. ; Knoblauch, P. ; Clausse, A.AIP conference proceedings, 2006, Vol.875 (1) [Periódico revisado por pares]United StatesSem texto completo |
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9 |
Material Type: Ata de Congresso
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0.2/spl mu/m gatelength, non-alloyed AlInAs/GaInAs JHEMTs with extrinsic ft=62 GHzShealy, J.B. ; Mondry, M.J. ; Heimbuch, M.E. ; Thompson, M.A. ; Denbaars, S.P.52nd Annual Device Research Conference, 1994, p.153-154IEEESem texto completo |
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10 |
Material Type: Ata de Congresso
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0.2 /spl mu/m LDD NMOSFETs fabricated by conventional optical lithographyJinshu Zhang ; Lo, T.C. ; PeiHsin TsienProceedings of 4th International Conference on Solid-State and IC Technology, 1995, p.238-242IEEETexto completo disponível |