Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0-3 piezoelectric composite film with high d33 coefficientCHEN, X.-D ; YANG, D.-B ; JIANG, Y.-D ; WU, Z.-M ; DAN LI ; GOU, F.-J ; YANG, J.-DSensors and actuators. A. Physical., 1998-03, Vol.65 (2-3), p.194-196 [Periódico revisado por pares]Lausanne: Elsevier ScienceTexto completo disponível |
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2 |
Material Type: Artigo
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0.1-[Formula Omitted] InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate RecessXu, Dong ; Chu, Kanin ; Diaz, Jose A ; Ashman, Michael D ; Komiak, J J ; Mt Pleasant, Louis M ; Vera, Alice ; Seekell, Philip ; Yang, Xiaoping ; Creamer, Carlton ; Nichols, K B ; Duh, K H George ; Smith, Phillip M ; Chao, P C ; Lin, Dong ; Ye, Peide DIEEE transactions on electron devices, 2016-08, Vol.63 (8) [Periódico revisado por pares]New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)Texto completo disponível |
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3 |
Material Type: Artigo
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0.1- \mu \text InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate RecessDong Xu ; Kanin Chu ; Diaz, Jose A. ; Ashman, Michael D. ; Komiak, J. J. ; Mt Pleasant, Louis M. ; Vera, Alice ; Seekell, Philip ; Xiaoping Yang ; Creamer, Carlton ; Nichols, K. B. ; Duh, K. H. George ; Smith, Phillip M. ; Chao, P. C. ; Lin Dong ; Ye, Peide D.IEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3076-3083 [Periódico revisado por pares]IEEETexto completo disponível |
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4 |
Material Type: Ata de Congresso
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0.1 /spl mu/m RFCMOS on high resistivity substrates for system on chip (SOC) applicationsYang, J.-Y. ; Benaissa, K. ; Crenshaw, D. ; Williams, B. ; Sridhar, S. ; Ai, J. ; Boselli, G. ; Zhao, S. ; Tang, S.-P. ; Mahalingam, N. ; Ashburn, S. ; Madhani, P. ; Blythe, T. ; Shichijo, H.Digest. International Electron Devices Meeting, 2002, p.667-670IEEETexto completo disponível |
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5 |
Material Type: Ata de Congresso
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0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array ApplicationsLin, C.H. ; Chou, Y.C. ; Lange, M.D. ; Yang, J.M. ; Nishimoto, M.Y. ; Lee, J. ; Nam, P.S. ; Boos, J.B. ; Bennett, B.R. ; Papanicolaou, N.A. ; Tsai, R.S. ; Gutierrez, A.L. ; Barsky, M.E. ; Chin, T.P. ; Wojtowicz, M. ; Lai, R. ; Oki, A.K.2007 IEEE Compound Semiconductor Integrated Circuits Symposium, 2007, p.1-4IEEETexto completo disponível |
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6 |
Material Type: Ata de Congresso
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0.1 μm In02Al08Sb-InAs HEMT low-noise amplifiers for ultralow-power applicationsChou, C. ; Lange, M.D. ; Bennett, B.R. ; Boos, J.B. ; Yang, J.M. ; Papanicolaou, N.A. ; Lin, C.H. ; Lee, L.J. ; Nam, P.S. ; Gutierrez, A.L. ; Farkas, D.S. ; Tsai, R.S. ; Wojtowicz, M. ; Chin, T.P. ; Oki, A.K.2007 IEEE International Electron Devices Meeting, 2007, p.617-620IEEETexto completo disponível |
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7 |
Material Type: Ata de Congresso
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0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applicationsYANG, J.-Y ; BENAISSA, K ; ASHBURN, S ; MADHANI, P ; BLYTHE, T ; SHICHIJO, H ; CRENSHAW, D ; WILLIAMS, B ; SRIDHAR, S ; AI, J ; BOSELLI, G ; ZHAO, S ; TANG, S.-P ; MAHALINGAM, NPiscataway NJ: IEEE 2002Texto completo disponível |
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8 |
Material Type: Artigo
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0.12-mu m gate III-V nitride HFET' s with high contact resistancesBurm, J ; Chu, K ; Schaff, W J ; Eastman, L F ; Khan, M A ; Chen, Qisheng ; Yang, J W ; Shur, M SIEEE electron device letters, 1997-04, Vol.18 (4), p.141-143 [Periódico revisado por pares]Texto completo disponível |
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9 |
Material Type: Artigo
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0.12-μm gate III-V nitride HFET's with high contact resistancesBurm, J. ; Chu, K. ; Schaff, W.J. ; Eastman, L.F. ; Khan, M.A. ; Qisheng Chen ; Yang, J.W. ; Shur, M.S.IEEE electron device letters, 1997-04, Vol.18 (4), p.141-143 [Periódico revisado por pares]IEEETexto completo disponível |
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10 |
Material Type: Ata de Congresso
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0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETsChou, Hsueh-Liang ; Su, P. C. ; Ng, J. C. W. ; Wang, P. L. ; Lu, H. T. ; Lee, C. J. ; Syue, W. J. ; Yang, S. Y. ; Tseng, Y. C. ; Cheng, C. C. ; Yao, C. W. ; Liou, R. S. ; Jong, Y. C. ; Tsai, J. L. ; Cai, Jun ; Tuan, H. C. ; Huang, Chih-Fang ; Gong, Jeng2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.401-404IEEETexto completo disponível |