Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Microanalysis of wurtzite-GaN single crystals prepared by d.c. arc dischargeYu, San ; Li, Hongdong ; Yang, Haibin ; Li, Dongmei ; Sun, Haiping ; Zou, GuangtianMaterials letters, 1996, Vol.26 (1), p.77-80 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Determination of Zeeman splittings of excitonic transitions in wurtzite GaN by mean of magnetocircular dichroism techniqueJulier, M ; Campo, J ; Coquillat, D ; Lascaray, J.P ; Scalbert, D ; Briot, OMaterials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.126-129 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Excitonic transitions in MBE grown h-GaN with cubic inclusionsStrauf, Stefan ; Michler, Peter ; Gutowski, Jürgen ; Selke, Hartmut ; Birkle, Udo ; Einfeldt, Sven ; Hommel, DetlefJournal of crystal growth, 1998-06, Vol.189-190, p.682-686 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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A novel crystal defect in epitaxial wurtzite gallium nitride filmWang, S.Q ; Liu, C.PMaterials letters, 1999-02, Vol.38 (3), p.202-207 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Synthesis and structure of nanocrystal-assembled bulk GaNChen, X.L ; Cao, Y.G ; Lan, Y.C ; Xu, X.P ; Li, J.Q ; Lu, K.Q ; Jiang, P.Z ; Xu, T ; Bai, Z.G ; Yu, Y.D ; Liang, J.KJournal of crystal growth, 2000-01, Vol.209 (1), p.208-212 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopyXUE, Q. K ; XUE, Q. Z ; KUWANO, S ; SAKURAI, T ; OHNO, T ; TSONG, I. S. T ; QIU, X. G ; SEGAWA, YThin solid films, 2000-05, Vol.367 (1-2), p.149-158 [Periódico revisado por pares]Lausanne: Elsevier ScienceTexto completo disponível |
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7 |
Material Type: Artigo
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Energy band and acceptor binding energy of GaN and AlxGa1−xNXia, Jian-Bai ; Cheah, K.W ; Wang, Xiao-Liang ; Sun, Dian-Zhao ; Kong, Mei-YingMaterials science & engineering. B, Solid-state materials for advanced technology, 2000-06, Vol.75 (2-3), p.204-206 [Periódico revisado por pares]Texto completo disponível |
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8 |
Material Type: Artigo
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XRD, XPS, SEM, PL and Raman scattering analysis of synthesised GaN powderSenthil Kumar, M ; Kumar, JMaterials chemistry and physics, 2003-01, Vol.77 (2), p.341-345 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Electronic structures of substitutional C and O impurities in wurtzite GaNLiu, Chang ; Kang, JunyongOptical materials, 2003-07, Vol.23 (1), p.169-174 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Non-Uniform Strain Field in a Wurtzite GaN Cylinder under Compression and the Related End Friction Effect on Quantum Behavior of Valence-BandsWei, X. X.Mechanics of advanced materials and structures, 2008-12, Vol.15 (8), p.612-622 [Periódico revisado por pares]Taylor & Francis GroupTexto completo disponível |