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Advances and prospects in Ga2O3/GaN heterojunctions: From fabrication to high-performance devices
Advances and prospects in Ga2O3/GaN heterojunctions: From fabrication to high-performance devices
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Advances and prospects in Ga2O3/GaN heterojunctions: From fabrication to high-performance devices

Xu, Kaicheng ; Wang, Rui ; Wang, Yixuan ; Wang, Jin ; Zhi, Ting ; Yang, Guofeng ; Xue, Junjun ; Chen, Dunjun ; Zhang, Rong

Materials science in semiconductor processing, 2025-01, Vol.185, p.108874, Article 108874 [Periódico revisado por pares]

Elsevier Ltd

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Understanding the machining mechanism in ultrasonic vibration-assisted nanogrinding of GaN
Understanding the machining mechanism in ultrasonic vibration-assisted nanogrinding of GaN
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Understanding the machining mechanism in ultrasonic vibration-assisted nanogrinding of GaN

Wang, Jiqiang ; Yan, Yongda ; Wei, Shipeng ; Chen, Guangtao ; Cui, Hailong ; Geng, Yanquan ; Li, Chen

Materials science in semiconductor processing, 2025-01, Vol.185, p.108868, Article 108868 [Periódico revisado por pares]

Elsevier Ltd

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3
Control polarity of gallium nitride on Si (111) using atomic layer annealing and thermal atomic layer deposition
Control polarity of gallium nitride on Si (111) using atomic layer annealing and thermal atomic layer deposition
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Control polarity of gallium nitride on Si (111) using atomic layer annealing and thermal atomic layer deposition

Yun, SeongUk ; Lee, Ping-Che ; Spiegelman, Jeffrey ; Kummel, Andrew C.

Applied surface science, 2024-12, Vol.676, p.161024, Article 161024 [Periódico revisado por pares]

Elsevier B.V

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4
Facile Semiconductor p–n Homojunction Nanowires with Strategic p-Type Doping Engineering Combined with Surface Reconstruction for Biosensing Applications
Facile Semiconductor p–n Homojunction Nanowires with Strategic p-Type Doping Engineering Combined with Surface Reconstruction for Biosensing Applications
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Facile Semiconductor p–n Homojunction Nanowires with Strategic p-Type Doping Engineering Combined with Surface Reconstruction for Biosensing Applications

Li, Liuan ; Fang, Shi ; Chen, Wei ; Li, Yueyue ; Vafadar, Mohammad Fazel ; Wang, Danhao ; Kang, Yang ; Liu, Xin ; Luo, Yuanmin ; Liang, Kun ; Dang, Yiping ; Zhao, Lei ; Zhao, Songrui ; Yin, Zongzhi ; Sun, Haiding

Nano-Micro Letters, 2024-12, Vol.16 (1), p.192-192, Article 192 [Periódico revisado por pares]

Singapore: Springer Nature Singapore

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5
New skin corrosion effect of magnetorheological electro-Fenton polishing investigated by friction and wear experiments
New skin corrosion effect of magnetorheological electro-Fenton polishing investigated by friction and wear experiments
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New skin corrosion effect of magnetorheological electro-Fenton polishing investigated by friction and wear experiments

Ou, Yangting ; Wang, Hao ; Wu, Yusen ; Chen, Zhijun ; Yan, Qiusheng ; Pan, Jisheng

Materials science in semiconductor processing, 2024-12, Vol.184, p.108759, Article 108759 [Periódico revisado por pares]

Elsevier Ltd

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6
Influencing the surface quality of free-standing wurtzite gallium nitride in ultra-high vacuum: Stoichiometry control by ammonia and bromine adsorption
Influencing the surface quality of free-standing wurtzite gallium nitride in ultra-high vacuum: Stoichiometry control by ammonia and bromine adsorption
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Influencing the surface quality of free-standing wurtzite gallium nitride in ultra-high vacuum: Stoichiometry control by ammonia and bromine adsorption

Rostami, Mohammadreza ; Yang, Biao ; Haag, Felix ; Allegretti, Francesco ; Chi, Lifeng ; Stutzmann, Martin ; Barth, Johannes V.

Applied surface science, 2024-11, Vol.674, p.160880, Article 160880 [Periódico revisado por pares]

Elsevier B.V

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7
Exploring gallium nitride nanosheets capability as a high-salt rejection membrane material: A molecular dynamics study
Exploring gallium nitride nanosheets capability as a high-salt rejection membrane material: A molecular dynamics study
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Exploring gallium nitride nanosheets capability as a high-salt rejection membrane material: A molecular dynamics study

Madhoush, Mohammad-Reza ; Sarrafzadeh, Mohammad-Hossein

Chemical engineering science, 2024-11, Vol.299, p.120519, Article 120519 [Periódico revisado por pares]

Elsevier Ltd

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8
Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results
Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results
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Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Fregolent, Manuel ; Piva, Francesco ; Buffolo, Matteo ; Santi, Carlo De ; Cester, Andrea ; Higashiwaki, Masataka ; Meneghesso, Gaudenzio ; Zanoni, Enrico ; Meneghini, Matteo

Journal of physics. D, Applied physics, 2024-11, Vol.57 (43), p.433002 [Periódico revisado por pares]

IOP Publishing

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9
Comprehensive Study and Performance Evaluation of an Interleaved GaN-Based PFC With Magnetic Component Size Reduction
Comprehensive Study and Performance Evaluation of an Interleaved GaN-Based PFC With Magnetic Component Size Reduction
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Comprehensive Study and Performance Evaluation of an Interleaved GaN-Based PFC With Magnetic Component Size Reduction

Dadkhah, Jalal ; Ho, Carl Ngai Man ; Liu, Jimmy Xuechao ; Xu, Yanming

IEEE transactions on industrial electronics (1982), 2024-11, Vol.71 (11), p.14075-14085 [Periódico revisado por pares]

New York: IEEE

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10
A Hybrid Gallium-Nitride-Silicon Direct-Injection Universal Power Flow and Quality Control Circuit With Reduced Magnetics
A Hybrid Gallium-Nitride-Silicon Direct-Injection Universal Power Flow and Quality Control Circuit With Reduced Magnetics
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A Hybrid Gallium-Nitride-Silicon Direct-Injection Universal Power Flow and Quality Control Circuit With Reduced Magnetics

Lu, Mowei ; Qin, Mengjie ; Mu, Wei ; Fang, Jingyang ; Goetz, Stefan M.

IEEE transactions on industrial electronics (1982), 2024-11, Vol.71 (11), p.14161-14174 [Periódico revisado por pares]

New York: IEEE

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Deste Autor:

  1. Gil, B
  2. Pearton, S

Neste Assunto:

  1. Science & Technology
  2. Gallium Nitrides
  3. Technology
  4. Gallium Nitride
  5. Physical Sciences

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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