Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires: Implications for Crystal-Phase Device DesignHou, Qichao ; Fonseka, H. Aruni ; Martelli, Faustino ; Paci, Barbara ; Gustafsson, Anders ; Gott, James A. ; Yang, Hui ; Huo, Suguo ; Yu, Xuezhe ; Chen, Lulu ; Chu, Yanmeng ; Zha, Chaofei ; Zhang, Zheyu ; Zhang, Linjun ; Shang, Fuxiang ; Fang, Wenzhang ; Cheng, Zhiyuan ; Sanchez, Ana M. ; Liu, Huiyun ; Zhang, YunyanACS applied nano materials, 2023-07, Vol.6 (13), p.11465-11471 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
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2 |
Material Type: Artigo
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Selective Area Heteroepitaxy of p-i-n Junction GaP Nanopillar Arrays on Si (111) by MOCVDChoi, Wonsik ; Huang, Hsien-Chih ; Fan, Shizhao ; Mohseni, Parsian K. ; Lee, Minjoo Larry ; Li, XiulingIEEE journal of quantum electronics, 2022-08, Vol.58 (4), p.1-6 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Thermal Conductivity of GaAs Nanowire Arrays Measured by the 3ω MethodGhukasyan, Ara ; Oliveira, Pedro ; Goktas, Nebile Isik ; LaPierre, RayNanomaterials (Basel, Switzerland), 2022-04, Vol.12 (8), p.1288 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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4 |
Material Type: Artigo
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Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDsMeier, Johanna ; Bacher, GerdMaterials, 2022-02, Vol.15 (5), p.1626 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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5 |
Material Type: Artigo
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Mixed Phase Confirmation of InAsxP1−x Nanowire Array Using Modified Reciprocal Space MappingJeong, In-Young ; Choi, Minhyuk ; Kim, Jeongtae ; Kim, Young Heon ; Shin, Jae Cheol ; Kim, Eun Kyu ; Kim, Chang-Soo ; Song, SeungwooElectronic materials letters, 2022, Vol.18 (1), p.79-86 [Periódico revisado por pares]Seoul: The Korean Institute of Metals and MaterialsTexto completo disponível |
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6 |
Material Type: Artigo
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Work function tailoring in gallium phosphide nanowiresSharov, Vladislav ; Alekseev, Prokhor ; Fedorov, Vladimir ; Nestoklon, Mikhail ; Ankudinov, Alexander ; Kirilenko, Demid ; Sapunov, Georgy ; Koval, Olga ; Cirlin, George ; Bolshakov, Alexey ; Mukhin, IvanApplied surface science, 2021-10, Vol.563, p.150018, Article 150018 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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The Dependence of the Growth Rate and Structure of III–V Nanowires on the Adatom Collection Area on the Substrate SurfaceDubrovskii, V. G.Technical physics letters, 2021-06, Vol.47 (6), p.440-443 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
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8 |
Material Type: Artigo
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XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP NanowiresKoval, Olga Yu ; Fedorov, Vladimir V ; Bolshakov, Alexey D ; Eliseev, Igor E ; Fedina, Sergey V ; Sapunov, Georgiy A ; Udovenko, Stanislav A ; Dvoretckaia, Liliia N ; Kirilenko, Demid A ; Burkovsky, Roman G ; Mukhin, Ivan SNanomaterials (Basel, Switzerland), 2021-04, Vol.11 (4), p.960 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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9 |
Material Type: Artigo
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Polytypism in GaAs/GaNAs core-shell nanowiresYukimune, M ; Fujiwara, R ; Mita, T ; Ishikawa, FNanotechnology, 2020-12, Vol.31 (50), p.505608-505608 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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10 |
Material Type: Artigo
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Study of Wurtzite Crystal Phase Stabilization in Heterostructured Ga(As,P) NanowiresSibirev, N. V. ; Fedorov, V. V. ; Kirilenko, D. A. ; Ubiyvovk, E. V. ; Berdnikov, Y. S. ; Bolshakov, A. D. ; Mukhin, I. S.Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (14), p.1862-1865 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |