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Diminution of impact ionization rate of charge carriers in semiconductors due to acoustic phonon scattering
Diminution of impact ionization rate of charge carriers in semiconductors due to acoustic phonon scattering
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Diminution of impact ionization rate of charge carriers in semiconductors due to acoustic phonon scattering

Acharyya, Aritra

Applied physics. A, Materials science & processing, 2017-10, Vol.123 (10), p.1-12, Article 629 [Periódico revisado por pares]

Berlin/Heidelberg: Springer Berlin Heidelberg

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2
Raman-active phonon line profiles in semiconducting nanowires
Raman-active phonon line profiles in semiconducting nanowires
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Raman-active phonon line profiles in semiconducting nanowires

Adu, Kofi W. ; Gutierrez, Humberto R. ; Eklund, Peter C.

Vibrational spectroscopy, 2006-10, Vol.42 (1), p.165-175 [Periódico revisado por pares]

Elsevier B.V

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3
Reststrahlen Band Studies of RuCrX (X = Si, Ge, Sn) Half Heusler Alloys
Reststrahlen Band Studies of RuCrX (X = Si, Ge, Sn) Half Heusler Alloys
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Reststrahlen Band Studies of RuCrX (X = Si, Ge, Sn) Half Heusler Alloys

Afaq, A. ; Maaz, Hassan ; Bakar, Abu ; Jamil, M. Imran

Journal of electronic materials, 2019-08, Vol.48 (8), p.5323-5327 [Periódico revisado por pares]

New York: Springer US

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4
Cavity Engineering of Photon–Phonon Interactions in Si Nanocavities
Cavity Engineering of Photon–Phonon Interactions in Si Nanocavities
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Cavity Engineering of Photon–Phonon Interactions in Si Nanocavities

Agarwal, Daksh ; Yoo, Jinkyoung ; Pan, Anlian ; Agarwal, Ritesh

Nano letters, 2019-11, Vol.19 (11), p.7950-7956 [Periódico revisado por pares]

United States: American Chemical Society

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5
Study the effect of plasma power density and gold catalyst thickness on Silicon Nanowires growth by Plasma Enhanced Chemical Vapour Deposition
Study the effect of plasma power density and gold catalyst thickness on Silicon Nanowires growth by Plasma Enhanced Chemical Vapour Deposition
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Study the effect of plasma power density and gold catalyst thickness on Silicon Nanowires growth by Plasma Enhanced Chemical Vapour Deposition

Ahmed, Nafis ; Bhargav, P. Balaji ; Rayerfrancis, Arokiyadoss ; Chandra, Balaji ; Ramasamy, P.

Materials letters, 2018-05, Vol.219, p.127-130 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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6
Novel hybrid monolayers SixGeySn1−x−y: first principles study of structural, electronic, optical, and electron transport properties with NH3 sensing application
Novel hybrid monolayers SixGeySn1−x−y: first principles study of structural, electronic, optical, and electron transport properties with NH3 sensing application
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Novel hybrid monolayers SixGeySn1−x−y: first principles study of structural, electronic, optical, and electron transport properties with NH3 sensing application

Ahmed, Touhid ; Subrina, Samia

Physical chemistry chemical physics : PCCP, 2022-04, Vol.24 (16), p.9475-9491 [Periódico revisado por pares]

Cambridge: Royal Society of Chemistry

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7
Angle-resolved electron-energy-loss study of Al/Si(111)
Angle-resolved electron-energy-loss study of Al/Si(111)
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Angle-resolved electron-energy-loss study of Al/Si(111)

AKAVOOR, P ; GLANDER, G. S ; KESMODEL, L. L ; BURKE, K

Physical review. B, Condensed matter, 1993-10, Vol.48 (16), p.12063-12071

Woodbury, NY: American Physical Society

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8
Influence of Elastic and Inelastic Electron-Phonon Interaction on Quantum Transport in Multigate Silicon Nanowire MOSFETs
Influence of Elastic and Inelastic Electron-Phonon Interaction on Quantum Transport in Multigate Silicon Nanowire MOSFETs
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Influence of Elastic and Inelastic Electron-Phonon Interaction on Quantum Transport in Multigate Silicon Nanowire MOSFETs

Akhavan, N D ; Afzalian, A ; Kranti, A ; Ferain, I ; Lee, C ; Yan, R ; Razavi, P ; Yu, R ; Colinge, J

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.1029-1037 [Periódico revisado por pares]

New York, NY: IEEE

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9
Influence of discrete dopant on quantum transport in silicon nanowire transistors
Influence of discrete dopant on quantum transport in silicon nanowire transistors
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Influence of discrete dopant on quantum transport in silicon nanowire transistors

Akhavan, Nima Dehdashti ; Ferain, Isabelle ; Yu, Ran ; Razavi, Pedram ; Colinge, Jean-Pierre

Solid-state electronics, 2012-04, Vol.70, p.92-100 [Periódico revisado por pares]

Kidlington: Elsevier Ltd

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10
Temporal dependence of transient dark counts in an avalanche photodiode: A solution for power-law behavior of afterpulsing
Temporal dependence of transient dark counts in an avalanche photodiode: A solution for power-law behavior of afterpulsing
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Temporal dependence of transient dark counts in an avalanche photodiode: A solution for power-law behavior of afterpulsing

Akiba, M. ; Tsujino, K.

Applied physics letters, 2016-08, Vol.109 (6) [Periódico revisado por pares]

Melville: American Institute of Physics

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