Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Preparation and characterization of tin diselenide thin film by spray pyrolysis techniqueAmalraj, L. ; Jayachandran, M. ; Sanjeeviraja, C.Materials research bulletin, 2004-12, Vol.39 (14), p.2193-2201 [Periódico revisado por pares]United States: Elsevier LtdTexto completo disponível |
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2 |
Material Type: Artigo
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Spray pyrolysised tin disulphide thin film and characterisationAmalraj, L ; Sanjeeviraja, C ; Jayachandran, MJournal of crystal growth, 2002-02, Vol.234 (4), p.683-689 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Ata de Congresso
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Studies on molybdenum diselenide thin films prepared by electrodeposition techniqueAnand, T J S ; Mahalingam, T ; Sanjeeviraja, C ; Jayachandran, M ; Chockalingam, Mary JSolar optical materials XVI; Proceedings of the Meeting, Denver, CO; UNITED STATES; 22 July 1999, 1999, p.125-130Sem texto completo |
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4 |
Material Type: Artigo
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Optical, photo-acoustic and electrical switching studies of amorphous GeS2 thin filmsAnanth Kumar, R. T. ; Das, Chandasree ; Asokan, S. ; Sanjeeviraja, C. ; Pathinettam Padiyan, D.Applied physics. A, Materials science & processing, 2014-06, Vol.115 (4), p.1151-1158 [Periódico revisado por pares]Berlin/Heidelberg: Springer Berlin HeidelbergTexto completo disponível |
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5 |
Material Type: Artigo
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Evolution of structural disorder using Raman spectra and Urbach energy in GeSe 0.5 S 1.5 thin filmsAnanth Kumar, R.T. ; Chithra Lekha, P. ; Sanjeeviraja, C. ; Pathinettam Padiyan, D.Journal of non-crystalline solids, 2014-12, Vol.405, p.21-26 [Periódico revisado por pares]Texto completo disponível |
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6 |
Material Type: Artigo
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Enhancement in threshold voltage with thickness in memory switch fabricated using GeSe 1.5 S 0.5 thin filmsAnanth Kumar, R.T. ; Das, Chandasree ; Chithra Lekha, P. ; Asokan, S. ; Sanjeeviraja, C. ; Pathinettam Padiyan, D.Journal of alloys and compounds, 2014-12, Vol.615, p.629-635 [Periódico revisado por pares]Texto completo disponível |
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7 |
Material Type: Artigo
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Enhancement in threshold voltage with thickness in memory switch fabricated using GeSe1.5S0.5 thin filmsAnanth Kumar, R.T. ; Das, Chandasree ; Chithra Lekha, P. ; Asokan, S. ; Sanjeeviraja, C. ; Pathinettam Padiyan, D.Journal of alloys and compounds, 2014-12, Vol.615, p.629-635 [Periódico revisado por pares]Kidlington: Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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Self assembled sulfur induced interconnected nanostructure TiO 2 electrode for visible light photoresponse and photocatalytic applicationAnitha, B. ; Ravidhas, C. ; Venkatesh, R. ; Raj, A. Moses Ezhil ; Ravichandran, K. ; Subramanian, B. ; Sanjeeviraja, C.Physica. E, Low-dimensional systems & nanostructures, 2017-07, Vol.91, p.148-160 [Periódico revisado por pares]Texto completo disponível |
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9 |
Material Type: Artigo
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Self assembled sulfur induced interconnected nanostructure TiO2 electrode for visible light photoresponse and photocatalytic applicationAnitha, B. ; Ravidhas, C. ; Venkatesh, R. ; Raj, A. Moses Ezhil ; Ravichandran, K. ; Subramanian, B. ; Sanjeeviraja, C.Physica. E, Low-dimensional systems & nanostructures, 2017-07, Vol.91, p.148-160 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Gas sensing properties of RF magnetron sputtered MgIn2O4 thin filmsAnuradha, B. ; Sanjeeviraja, C.Sensors and actuators. A. Physical., 2012-06, Vol.179, p.98-104 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |